Room temperature deposition of XRD-amorphous TiO2 thin films: Investigation of device performance as a function of temperature
Source abstract
Abstract
Abstract In this study, TiO 2 thin films were fabricated by radio frequency sputtering at room temperature in pure Ar atmosphere starting from a 6 in. TiO 2 target. The thickness of the films was controlled by deposition time and the effect of Ar sputtering pressure on the characteristics of TiO 2 thin films was evaluated. Surface morphology and optical properties of TiO 2 films were investigated using X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and UV–Vis spectrophotometry. Also, the refractive index and extinction coefficient of films were inferred by fitting spectrophotometric data. Schottky diode were fabricated by evaporation of Ni on TiO 2 films. Current-voltage (I-V) measurements of Ni/TiO 2 films showed that the rectifying properties of the device improves with the increasing of TiO 2 film density and thickness. Therefore, the best I-V characteristic of the device was investigated depending on the temperature. Also, Ni/n-TiO 2 /p-Si/Al devices were fabricated to understand their transport mechanism.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and interfaces · Semiconductor materials and devices · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (45)
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