Densification of additive-free polycrystalline β-SiC by spark-plasma sintering
Source abstract
Abstract
Abstract Additive-free β-SiC nanopowders were densified by spark-plasma sintering in the temperature range 1650–2200 °C, holding time 1–30 min, and pressure 50–150 MPa. The starting nanopowder was further refined and mechanically activated by ball milling in order to promote densification. In a detailed parametric study, temperature, holding time, and/or pressure were varied to investigate their effect on the densification and grain growth during sintering. High densifications were obtained for temperatures greater than 1800 °C. Full densification (98.0 ± 0.6%) was reached at a sintering temperature of 2100 °C. Depending on the sintering conditions, nanostructured materials can be produced with grain sizes between 90 and 100 nm, and microstructured materials with grain sizes between 0.22 and 2.39 μm. Pressure has a major effect on the grain size, it being necessary to use a pressure of 150 MPa to obtain nanostructured materials.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced ceramic materials synthesis · Advanced materials and composites · Aluminum Alloys Composites Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (24)
Show source-provided references
1. Substrates for gallium nitride epitaxy10.1016/S0927-796X(02)00008-6 ↗
2. Densification of liquid phase sintered silicon carbide
3. Fabrication of nanograined silicon carbide by ultrahigh-pressure hot isostatic pressing10.1111/j.1151-2916.1999.tb01833.x ↗
4. What is microwave processing?
5. H.S. Shulman, M.L. Fall, W.J. Walker, Sintering uniformity and reproductibility with 2.45GHz, Microwaves in a Industrial Sized Chamber, Presented at 104 Annual Congress of the American Ceramic Society, St. Louis, MO, 2002.
6. Microwave measurements of the dielectric properties of silicon carbide at high temperature10.21608/ejs.2002.150483 ↗
7. Mechanical characteristics of microwave sintered silicon carbide10.1007/BF02710087 ↗
8. Liquid assisted sintering of SiC powders by MW (2.45GHz) heating10.1016/S0955-2219(01)00498-8 ↗
9. Consolidation of nanostructured SiC with disorder–order transformation10.1016/j.scriptamat.2003.09.027 ↗
10. Consolidation of nanostructured β-SiC by spark plasma sintering system10.1111/j.1551-2916.2004.01436.x ↗
11. Densification of SiC by SPS-effects of time, temperature and pressure10.1016/j.jeurceramsoc.2006.10.005 ↗
12. Processing and characterization of fine-grained monolithic SiC ceramic synthesized by spark plasma sintering10.1016/j.msea.2009.12.027 ↗
13. Synthesis of nanocrystalline SiC at ambient temperature through high energy reaction milling10.1016/S0965-9773(96)00058-X ↗
14. HREM observations of the synthesized process of nano-sized SiC by ball milling of Si and C mixed powders10.1016/S0921-5093(00)01293-4 ↗
15. Synthesis and characterization of silicon carbide by reaction milling in a dual-drive planetary mill10.1016/j.msea.2007.01.080 ↗
16. Synthesis and characterization of nanostructured silicon carbide10.1016/j.matlet.2008.04.086 ↗
17. Microstructural characterization of nanocrystalline SiC synthesized by high-energy-ball-milling10.1016/j.jallcom.2009.06.170 ↗
18. Cullity · 1978
19. Analytical formulation of the variance method of line-broadening analysis for voigtian X-ray diffraction peaks10.1107/S0021889806017122 ↗
20. Crystallite sizes of LiH before and after ball milling and thermal exposure10.1016/j.jallcom.2006.12.035 ↗
21. Klug · 1974
22. Mittemeijer · 2004
23. Synder · 1999
24. The effect of electric field and pressure on the synthesis and consolidation of materials: a review of the spark plasma sintering method10.1007/s10853-006-6555-2 ↗