Dielectric and mechanical properties of porous Si3N4 ceramics prepared via low temperature sintering
Source abstract
Abstract
Abstract Borophosphosilicate bonded porous silicon nitride (Si 3 N 4 ) ceramics were fabricated in air using a conventional ceramic process. The porous Si 3 N 4 ceramics sintered at 1000–1200 °C shows a relatively high flexural strength and good dielectric properties. The influence of the sintering temperature and contents of additives on the flexural strength and dielectric properties of porous Si 3 N 4 ceramics were investigated. Porous Si 3 N 4 ceramics with a porosity of 30–55%, flexural strength of 40–130 MPa, as well as low dielectric constant of 3.5–4.6 were obtained.
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Research context
OpenAlex topics: Advanced ceramic materials synthesis · Microwave Dielectric Ceramics Synthesis · MXene and MAX Phase Materials
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References (25)
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