Joining of sintered silicon carbide using ternary Ag–Cu–Ti active brazing alloy

Abstract Sintered silicon carbide was brazed to itself by Ag–35.25 wt%Cu–1.75 wt%Ti filler alloy at 860 °C, 900 °C and 940 °C for 10 min, 30 min and 60 min. Mechanical properties both at room temperature and high temperature were measured by flexural strength. The interfacial microstructure was investigated by electron probe microanalysis (EPMA), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The experimental results indicate that increased brazing temperature heightens the flexural strength and the maximal four-point flexural strength reaches 342 MPa at room temperature. In addition longer holding times result in thicker reaction layer, which increases mismatch of coefficients of thermal expansion (CTE) between SiC substrate and reaction layer and finally leads to poor mechanical properties due to high residual stresses. High temperature flexural strength decreases with an increase of test temperature due to softening of the filler alloy. A reaction layer composed of TiC and Ti 5 Si 3 was observed at the interface of SiC/filler alloy and there is a representative microstructure: SiC/continuous fine TiC layer/discontinuous coarse Ti 5 Si 3 layer/filler alloy.