Preparation of β-Ga2O3/ε-Ga2O3 type II phase junctions by atmospheric pressure chemical vapor deposition
Source abstract
Abstract
We synthesized β-Ga 2 O 3 /ε-Ga 2 O 3 phase junctions by exploiting distinct crystalline phases in gallium oxide through a one-step atmospheric-pressure chemical vapor deposition process on sapphire substrates , adjusting parameters such as temperature and gas flow rate accordingly. The coexistence of these two crystalline phases was verified via X-ray diffraction (XRD) and Raman spectroscopy analyses, while optical microscopy provided visual evidence regarding surface morphology changes throughout phase junction formation stages. Furthermore, we utilized a UV–visible spectrophotometer to quantify the bandgap and integrated this data with X-ray photoelectron spectroscopy (XPS) analysis of core level peaks and valence band spectra in order to construct an energy level structure for the β-Ga 2 O 3 /ε-Ga 2 O 3 phase junction. Our findings demonstrate that this phase junction exhibits a type II energy band alignment, with measured valence and conduction band offsets of 0.54 eV and 0.41 eV respectively. This discovery holds significant implications for self-powered photodetectors utilizing gallium oxide as well as other potential applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · Advanced Photocatalysis Techniques · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (30)
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