Room temperature tuning of non volatile magnetoelectric memory in Al doped Sr3Co2Fe24O41

Abstract Study of magnetoelectric coupling in Type II multiferroics is indeed a fascinating area of research in next-generation nonvolatile data memory devices. To facilitate memory device applications, it is necessary to find a single phase material with substantial magnetoelectric coupling at room temperature. A room temperature nonvolatile memory device in aluminium doped Sr3Co2Fe24O41 is demonstrated here. Aluminium doping in Sr3Co2Fe24O41 not only enhances magnetoelectric coupling but also allows for easy tuning of memory states in the device. Maximum Magnetoelectric coefficient (α) of 59.44 mV/cm-Oe is observed for x = 0.04 in Sr3Co2(Fe1-xAlx)24O41. α could be stored and maintained for memory use for a broad period of time; additionally, the memory states of the device could be switched and tuned with electric pulses, which is an additional benefit of the memory device. This kind of magnetoelectric memory can be beneficial due to its non-destructive read operations, which is the main challenge in FERAM. This conveniently integrable single phase, robust memory system with increased memory density will undoubtedly pave the way for future memory applications.