journal article·2017-12

Co-doping for significantly improved thermoelectric figure of merit in p-type Bi1-2Mg Pb CuSeO oxyselenides

Yazhou Sun, Cencen Zhang, Chengming Cao, Jianxin Fu, Liangming Peng

Ceramics International· Volume 43· Issue 18
Publisher page

Abstract

Abstract The microstructure, oxidation state and thermoelectric transport properties of Mg and Pb co-doped p -type Bi 1–2 x Mg x Pb x CuSeO oxyselenides have been investigated. Pure single BiCuSeO phase are obtained for all the samples without preferential growth in the crystallites. X-ray photoelectron spectroscopy (XPS) results indicate that both Mg and Pb dopants are in the 2+ oxidation state whereas other than the expected Bi 3+ , higher-oxidation-state Bi ions also exist in both the pristine and doped BiCuSeO compounds. The Mg and Pb co-doping yields a remarkable enhancement in the electrical conductivity coupled with a moderate Seebeck coefficient. A pronounced increment in power factor is achieved from 2.54 μW cm −1 K −2 for the pristine BiCuSeO to 11.1 μW cm −1 K −2 for Bi 0.88 Mg 0.06 Pb 0.06 CuSeO at 750 K. In addition to increasing the power factor, Mg and Pb co-doping reduces the lattice thermal conductivity owing to the dopant-induced point defect scattering of phonon. The combination of optimized power factor and intrinsically low lattice thermal conductivity results in a high Z T of 1.19 at 750 K for Bi 0.88 Mg 0.06 Pb 0.06 CuSeO, which is about 3.1 times as large as that for the pristine BiCuSeO.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Chalcogenide Semiconductor Thin Films · Thermal Expansion and Ionic Conductivity

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