Effect of Ni doping on the structural, electrical, and optical properties of transparent CuCrO2 films grown using pulsed laser deposition
Source abstract
Abstract
Abstract In this study, the structural, electrical, and optical properties of CuCr 1−x Ni x O 2 epitaxial films (x = 0, 0.01, 0.03, 0.05), which exhibited p-type properties, were investigated. The (001)-oriented epitaxial films were deposited on c-plane α-Al 2 O 3 substrates using pulsed laser deposition at a growth temperature of 700 °C and oxygen pressure of 10 mTorr. The optical energy band gap of the CuCr 0.95 Ni 0.05 O 2 film was determined to be 3.22 eV. The hole carrier concentration of the CuCrO 2 film increased from 5.1 × 10 14 to 2.2 × 10 17 cm −3 upon doping with 5 at% Ni. Based on Hall measurement and X-ray photoelectron spectroscopy results, it was suggested that the substituted Ni 2+ dopants at Cr 3+ sites formed an acceptor level without any charge compensation with Cu 2+ and/or Cr 4+ .
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Copper-based nanomaterials and applications · ZnO doping and properties · Electronic and Structural Properties of Oxides
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