Enhancement of thermoelectric performance of N-type Bi2Te3 based thin films via in situ annealing during magnetron sputtering
Source abstract
Abstract
Abstract In this work, n-type Bi2Te3 based thin films were prepared in 300 °C via DC magnetron sputtering, and influences of sputtering power and annealing time on thermoelectric properties of films were investigated. The raise of sputtering power brings about the improvement of deposited rate and enhancement of grain size. Taking the consideration that the large-sized grains are to phonon scattering, we determine the medial power of 30 W as the basic technical parameters for the purpose of further optimizing performance through an in situ annealing process. Subsequently, thin-film treated by in situ annealing process acts out an obvious reduction in electrical conductivity attributed to the decrease in carrier concentration. Especially, the film annealed for 40 min shows an enhancement in the Seebeck coefficient and leads to a maximum power factor 0.82 m W m−1 K−2 at 543 K.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal Radiation and Cooling Technologies · Advanced Thermodynamics and Statistical Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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