Dispersal mechanism of different dispersants and its effect on performance of 4H-SiC polishing slurry
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OpenAlex topics: Advanced Surface Polishing Techniques · Advanced Machining and Optimization Techniques · Advanced ceramic materials synthesis
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References (44)
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1. Advances in Si and SiC materials for high-performance supercapacitors toward integrated energy storage systems10.1002/smll.202101775 ↗
2. A comparative evaluation of SiC power devices for high-performance domestic induction heating10.1109/TIE.2015.2405057 ↗
3. The effect of electrothermal nonuniformities on parallel connected SiC power devices under unclamped and clamped inductive switching10.1109/TPEL.2015.2477831 ↗
4. A survey of wide bandgap power semiconductor devices10.1109/TPEL.2013.2268900 ↗
5. Unprecedented piezoresistance coefficient in strained silicon carbide10.1021/acs.nanolett.9b02821 ↗
6. Polishing process of 4H-SiC under different pressures in a water environment10.1016/j.diamond.2023.109710 ↗
7. Mechanism analysis of chemical mechanical polishing of 4H-SiC wafer
8. Recent progress in synthesis, properties and potential applications of SiC nanomaterials10.1016/j.pmatsci.2015.01.003 ↗
9. Dominant factors and their action mechanisms on material removal rate in electrochemical mechanical polishing of 4H-SiC (0001) surface10.1016/j.apsusc.2021.150130 ↗
10. Improved chemical mechanical polishing performance in 4H-SiC substrate by combining novel mixed abrasive slurry and photocatalytic effect10.1016/j.apsusc.2021.151676 ↗
11. Sustainable electrochemical mechanical polishing (ECMP) for 4H-SiC wafer using chemical-free polishing slurry with hydrocarbon-based solid polymer electrolyte10.1016/j.apsusc.2024.160241 ↗
12. Enhancement mechanism of chemical mechanical polishing for single-crystal 6H-SiC based on electro-fenton reaction10.1016/j.diamond.2020.108147 ↗
13. High throughput SiC wafer polishing with good surface morphology
14. Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials10.1016/j.cap.2012.02.016 ↗
15. Accelerated C-face polishing of silicon carbide by alkaline polishing slurries with Fe3O4 catalysts10.1016/j.jece.2021.106863 ↗
16. Investigation of SiC single crystal polishing by combination of anodic oxidation and mechanical polishing10.20964/2020.05.66 ↗
17. Synthesis of Al2O3@MnO2 composite abrasives and their chemical mechanical polishing performance on silicon carbide (SiC)10.1016/j.ceramint.2024.03.120 ↗
18. Nanosecond laser irradiation assisted chemical mechanical polishing (CMP) process for promoting material removal of single crystal 4H–SiC10.1016/j.ceramint.2024.06.277 ↗
19. Preparation and characterization of slurry for chemical mechanical planarization (CMP)
20. Surface morphology evolution induced by multiple femtosecond laser ablation on 4H-SiC substrate and its application to CMP10.1149/2.0261712jss ↗
21. Influence of cerium oxide abrasive particle morphologies on polishing performance10.1002/crat.202300308 ↗
22. Polishing mechanism of CMP 4H-SiC crystal substrate (0001) Si surface based on an alumina (Al2O3) abrasive10.3390/ma17030679 ↗
23. Atomic-level material removal mechanisms of Si(110) chemical mechanical polishing: insights from ReaxFF reactive molecular dynamics simulations10.1021/acs.langmuir.0c03416 ↗
24. Chemical mechanical polishing for sapphire wafers using a developed slurry10.1016/j.jmapro.2021.01.004 ↗
25. A distinctive material removal mechanism in the diamond grinding of (0001)-oriented single crystal gallium nitride and its implications in substrate manufacturing of brittle materials10.1016/j.ijmachtools.2024.104222 ↗
26. Polishing single-crystal silicon carbide with porous structure diamond and graphene-TiO2 slurries10.1007/s00170-019-04223-x ↗
27. Two-step chemical mechanical polishing of 4H-SiC (0001) wafer10.1149/2162-8777/ac12de ↗
28. Novel polystyrene/CeO2-TiO2 multicomponent core/shell abrasives for high-efficiency and high-quality photocatalytic-assisted chemical mechanical polishing of reaction-bonded silicon carbide10.1016/j.apsusc.2019.04.037 ↗
29. Performance of colloidal silica and ceria based slurries on CMP of Si-face 6H-SiC substrates10.1016/j.apsusc.2015.10.158 ↗
30. The effect of surface polarity on the CMP behavior of 6H-SiC substrates10.1134/S1070427220060099 ↗
31. Research on material removal rate of CMP 6H-SiC crystal substrate (0001) Si surface based on abrasive alumina (Al2O3)10.1016/j.proeng.2011.11.2673 ↗
32. Hydrogen bonding and interparticle forces in platelet α-Al2O3 dispersions: yield stress and zeta potential10.1021/la8036204 ↗
33. Stabilization of highly concentrated alumina suspensions with different dispersants10.21278/TOF.42304 ↗
34. Experimental and theoretical analysis of ink dispersion stability for polymer electrolyte fuel cell applications10.1149/2.0961706jes ↗
35. Role of ionic strength in chemical mechanical polishing of silicon carbide using silica slurries10.1016/j.colsurfa.2014.01.038 ↗
36. Production and dispersion stability of nanoparticles in nanofluids10.1016/j.powtec.2007.11.020 ↗
37. Effects of slurry pH on chemical and mechanical actions during chemical mechanical polishing of YAG10.1016/j.apsusc.2021.150359 ↗
38. Insight into polishing slurry and material removal mechanism of photoassisted chemical mechanical polishing of YAG crystals10.1021/acs.langmuir.3c01824 ↗
39. Arxps studies of SiO2-SiC interfaces and Oxidation of 6H SiC single-crystal Si-(001) and C-(001)over-bar surfaces10.1557/JMR.1994.3088 ↗
40. Covalent attachment of organic monolayers to silicon carbide surfaces10.1021/la704002y ↗
41. Investigating surface wear characteristics of single-crystal SiC based on metal electrochemical corrosion10.1016/j.mssp.2023.108004 ↗
42. Mechanistic difference between Si-face and C-face polishing of 4H-SiC substrates in aqueous and non-aqueous slurries10.1016/j.ceramint.2022.10.193 ↗
43. Influence of the adsorption of polyethylene glycol at the Al2O3 surface on the electrochemical properties of the Al2O3/solution interface10.1177/026361749901700204 ↗
44. Preparation of concentrated aqueous alumina suspensions for soft-molding microfabrication10.1016/S0955-2219(03)00241-3 ↗