Removal mechanism on 4H–SiC single crystal by picosecond laser ablation-assisted chemical mechanical polishing (CMP)
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OpenAlex topics: Advanced Surface Polishing Techniques · Diamond and Carbon-based Materials Research · Laser Material Processing Techniques
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References (40)
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1. Investigation of SiC single crystal polishing by combination of anodic oxidation and mechanical polishing10.20964/2020.05.66 ↗
2. An investigation of recast behavior in laser ablation of 4H-silicon carbide wafer10.1016/j.mssp.2019.104701 ↗
3. Ultraprecision CMP for sapphire, GaN, and SiC for advanced optoelectronics materials10.1016/j.cap.2012.02.016 ↗
4. The polishing properties of magnetorheological-elastomer polishing pad based on the heterogeneous Fenton reaction of single-crystal SiC10.1016/j.precisioneng.2022.09.006 ↗
5. Characterization of colloidal silica abrasives with different sizes and their chemical-mechanical polishing performance on 4H-SiC (0 0 0 1)10.1016/j.apsusc.2014.04.048 ↗
6. Chemical mechanical planarization (CMP) of on-axis Si-face SiC wafer using catalyst nanoparticles in slurry10.1016/j.surfcoat.2014.03.044 ↗
7. A quantitative assessment of nanometric machinability of major polytypes of single crystal silicon carbide10.1016/j.jeurceramsoc.2012.04.016 ↗
8. Study on nanomechanical properties of 4H-SiC and 6H-SiC by molecular dynamics simulations10.1016/j.ceramint.2019.07.214 ↗
9. Wijesundara · 2011
10. Laser-induced phase separation of silicon carbide10.1038/ncomms13562 ↗
11. Investigations on continuous-wave laser and pulsed laser induced controllable ablation of SiCf/SiC composites10.1016/j.jeurceramsoc.2021.04.061 ↗
12. Chemi-mechanical polishing of on-axis semi-insulating SiC substrates10.4028/www.scientific.net/MSF.457-460.805 ↗
13. Chemomechanical polishing of silicon carbide10.1149/1.1837711 ↗
14. Laser method for synthesis and processing of continuous diamond films on nondiamond substrates10.1126/science.252.5004.416 ↗
15. Direct femtosecond laser surface nano/microstructuring and its applications10.1002/lpor.201200017 ↗
16. Femtosecond-laser-ablation induced transformations in the structure and surface properties of diamond-like nanocomposite films10.1016/j.apsusc.2019.144907 ↗
17. Ultrafast laser micromachining of 3C-SiC thin films for MEMS device fabrication10.1007/s00170-007-1223-5 ↗
18. Explosive phase transformation in excimer laser ablation10.1016/S0169-4332(97)00619-3 ↗
19. The physical mechanisms of short-pulse laser ablation10.1016/S0169-4332(99)00440-7 ↗
20. Theoretical models and qualitative interpretations of fs laser material processing10.2961/jlmn.2007.01.0014 ↗
21. Progressive formation of fine and coarse ripples on SiC surface by repeated irradiation of femtosecond laser pulses10.1007/s00340-013-5476-4 ↗
22. Femtosecond pulse laser processing of TiN on silicon10.1016/S0169-4332(99)00481-X ↗
23. The effects of laser parameters and the ablation mechanism in laser ablation of C/SiC composite10.3390/ma12193076 ↗
24. Bass · 1978 · 233
25. Copley · 1983 · 82
26. The polishing effect of SiC substrates in femtosecond laser irradiation assisted chemical mechanical polishing (CMP)
27. Picosecond laser-assisted chemical mechanical polishing (CMP): aiming at the Si-face of single-crystal 6H-SiC wafer
28. Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face10.1016/j.apsusc.2020.147963 ↗
29. Femtosecond laser modification of silicon carbide substrates and its influence on CMP process10.1016/j.ceramint.2021.01.188 ↗
30. Controlled sublimation growth of single crystalline 4H-SiC and 6H-SiC and identification of polytypes by x-ray diffraction10.1063/1.104443 ↗
31. Roles of chemistry modification for laser textured metal alloys to achieve extreme surface wetting behaviors10.1016/j.matdes.2020.108744 ↗
32. Resistance of solid surfaces to wetting by water10.1021/ie50320a024 ↗
33. Johnson · 1985
34. Incipient plasticity in 4H-SiC during quasistatic nanoindentation10.1016/j.jmbbm.2013.12.005 ↗
35. Interaction potential for silicon carbide: a molecular dynamics study of elastic constants and vibrational density of states for crystalline and amorphous silicon carbide10.1063/1.2724570 ↗
36. A new-type of defect generation at a4H-SiC/SiO2 interface by oxidation induced compressive strain10.4028/www.scientific.net/MSF.740-742.469 ↗
37. First-principles investigations for oxidation reaction processes at 4H-SiC/SiO2 interface and its orientation dependence10.1016/j.susc.2015.06.028 ↗
38. Research on reaction method of high removal rate chemical mechanical polishing slurry for 4H-SiC substrate10.1143/JJAP.50.046501 ↗
39. Computational methods applied to oxidational wear10.1016/0043-1648(95)06856-2 ↗
40. Study on the mechanism of solid-phase oxidant action in tribochemical mechanical polishing of SiC single crystal substrate10.3390/mi12121547 ↗