Nanosecond laser irradiation assisted chemical mechanical polishing (CMP) process for promoting material removal of single crystal 4H–SiC
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Diamond and Carbon-based Materials Research · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (33)
Show source-provided references
1. Investigation on the underwater femtosecond laser polishing SiC ceramic10.1080/00150193.2020.1761699 ↗
2. The polishing effect of SiC substrates in femtosecond laser irradiation assisted chemical mechanical polishing (CMP)10.1149/2.0041704jss ↗
3. Inhibition mechanism of benzotriazole in copper chemical mechanical planarization10.4028/www.scientific.net/AMM.607.74 ↗
4. A material removal model for silicon oxide layers in chemical mechanical planarization considering the promoted chemical reaction by the down pressure10.1016/j.triboint.2015.09.008 ↗
5. Modeling effects of abrasive particle size and concentration on material removal at molecular scale in chemical mechanical polishing10.1016/j.apsusc.2010.06.077 ↗
6. Chemical mechanical planarization (CMP) of on-axis Si-face SiC wafer using catalyst nanoparticles in slurry10.1016/j.surfcoat.2014.03.044 ↗
7. Hybrid CO2 laser-polishing process for improving material removal of silicon carbide10.1007/s00170-019-04846-0 ↗
8. Femtosecond laser modification of silicon carbide substrates and its influence on CMP process10.1016/j.ceramint.2021.01.188 ↗
9. Centimeter-scale low-damage micromachining on single-crystal 4H–SiC substrates using a femtosecond laser with square-shaped flat-top focus spots10.1016/j.ceramint.2021.05.027 ↗
10. Removal mechanism on 4H–SiC single crystal by picosecond laser ablation-assisted chemical mechanical polishing (CMP)10.1016/j.ceramint.2024.01.239 ↗
11. UV-TiO2 photocatalysis-assisted chemical mechanical polishing 4H-SiC wafer10.1080/10426914.2017.1364855 ↗
12. Materials removal mechanism of single crystalline SiC with laser-induced periodic surface structures (LIPSS)10.1016/j.jmatprotec.2023.118108 ↗
13. The ablation behavior and modification mechanism of SiC under different laser energy10.1016/j.jmrt.2024.05.125 ↗
14. A review of ultra-short pulse laser micromachining of wide bandgap semiconductor materials: SiC and GaN10.1016/j.mssp.2024.108559 ↗
15. Progressive formation of fine and coarse ripples on SiC surface by repeated irradiation of femtosecond laser pulses10.1007/s00340-013-5476-4 ↗
16. Laser-induced phase separation of silicon carbide10.1038/ncomms13562 ↗
17. Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face10.1016/j.apsusc.2020.147963 ↗
18. A study of near-infrared nanosecond laser ablation of silicon carbide10.1016/j.ijheatmasstransfer.2013.06.050 ↗
19. Fabrication and functional characteristics of micro/nano structures on the RB-SiC surface through nanosecond pulsed laser irradiation10.1016/j.ceramint.2023.08.310 ↗
20. Numerical and experimental analysis of nanosecond laser ablation of SiC10.1016/j.mssp.2022.107020 ↗
21. Facile and eco-friendly fabrication of superhydrophilic and superhydrophobic SiC surfaces by nanosecond laser treatment10.2351/7.0001009 ↗
22. On the surface characteristics and removability of RB-SiC composite processed by nanosecond pulsed laser10.1016/j.compositesa.2024.108082 ↗
23. Effect of beam profile on nanosecond laser drilling of 4H-SIC10.2351/1.5040597 ↗
24. Modeling of material removal rate considering the chemical mechanical effects of lubricant, oxidant, and abrasive particles for aluminum chemical mechanical polishing at low pressure
25. Material removal rate of double-faced mechanical polishing of 4H-SiC substrate10.1007/s00170-021-08186-w ↗
26. Prediction of the surface roughness and material removal rate in chemical mechanical polishing of single-crystal SiC via a back-propagation neural network10.1016/j.precisioneng.2021.04.012 ↗
27. A mathematical model for chemical-mechanical polishing based on formation and removal of weakly bonded molecular species10.1016/S0043-1648(03)00015-2 ↗
28. Monoatomic layer removal mechanism in chemical mechanical polishing process: a molecular dynamics study10.1063/1.3327448 ↗
29. Investigation of polishing pads impregnated with Fe and Al2O3 particles for single-crystal silicon carbide wafers10.3390/app6030089 ↗
30. Abrasive-free polishing of single-crystal 4H-SiC with silica glass plates10.1149/2.0271512jss ↗
31. Formation mechanism of hierarchical micro- and nanostructures on copper induced by low-cost nanosecond lasers10.1016/j.apsusc.2018.09.055 ↗
32. One-step fabrication of fine surfaces via femtosecond laser on sliced SiC10.1016/j.mssp.2021.105926 ↗
33. Cross-sectional TEM analysis of laser-induced ripple structures on the 4H–SiC single-crystal surface10.1007/s00339-008-4611-2 ↗