journal article·2019-06

Investigation on ultra-precision lapping of A-plane and C-plane sapphires

Linlin Wan, Peng Dai, Le Li, Zhaohui Deng, Yangxuan Hu

Ceramics International· Volume 45· Issue 9
Publisher page

Abstract

Abstract A series of lapping experiments on A-plane and C-plane sapphires were accomplished using a precision single-side lapping machine. The differences in the material removal rate, surface topography, surface breakage and subsurface damage between the two sapphire orientations were explored. The influence of the lapping parameters, such as the abrasive disk speed, lapping time, lapping liquid flow rate and wander star wheel speed, were analysed for their effects on the material removal rate. The experimental results showed that the abrasive disk speed played the most prominent role in the material removal rate during sapphire lapping. Under the same lapping conditions, the removal rate of the C-plane sapphires could be 5.7 times higher than that of the A-plane sapphires. The main surface damage form of the A-plane sapphires after lapping was surface breakage, while that of the C-plane sapphires was surface scratching. After lapping, the A-plane sapphires had a greater subsurface damage depth than the C-plane sapphires. The subsurface cracks of the A-plane sapphires included transverse and radial cracks, while the subsurface cracks of the C-plane sapphires were mainly transverse cracks. The lapping surface quality of the C-plane sapphires was superior to the A-plane sapphires.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Advanced Surface Polishing Techniques · Adhesion, Friction, and Surface Interactions · Fluid Dynamics and Heat Transfer

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (22)

Show source-provided references
1. Dobrovinskaya · 2009
2. Thermal healing of the sub-surface damage layer in sapphire10.1016/j.matchemphys.2010.06.041 ↗
3. Analysis of interacting cracks due to sequential indentations on sapphire10.1016/j.actamat.2011.02.026 ↗
4. A novel process for the generation of pristine sapphire surfaces10.1016/S0040-6090(02)00985-9 ↗
5. Experimental observations and computational modeling of fracturing in an anisotropic brittle crystal (Sapphire)10.1023/A:1007565624473 ↗
6. Chemical mechanical polishing (CMP) anisotropy in sapphire10.1016/j.apsusc.2004.04.027 ↗
7. The effect of anisotropy on the deformation and fracture of sapphire wafers subjected to thermal shocks10.1016/j.jmatprotec.2007.03.125 ↗
8. Static and dynamic indentation response of basal and prism plane sapphire10.1016/j.jeurceramsoc.2011.03.006 ↗
9. Plasticity and fracture of sapphire at room temperature: load-controlled microcompression of four different orientations10.1016/j.ceramint.2013.07.121 ↗
10. Influence of mosaicity on the fracture behavior of sapphire10.1016/j.actamat.2013.12.004 ↗
11. Grinding forces in micro slot-grinding (MSG) of single crystal sapphire10.1016/j.ijmachtools.2016.10.004 ↗
12. Dependence of material removal on crystal orientation of sapphire under cross scratching10.1016/j.jeurceramsoc.2017.01.032 ↗
13. Study of stress intensity factor on the anisotropic machining behavior of single crystal sapphire10.1016/j.cirp.2018.04.114 ↗
14. The Mechanical response characteristics of sapphire under dynamic and quasi-static indentation loading10.1016/j.ceramint.2018.05.162 ↗
15. Research on the dynamic mechanical properties of C-plane sapphire under impact loading10.1016/j.ceramint.2018.02.227 ↗
16. Effects of crystal orientation on the crack propagation of sapphire by sequential indentation testing10.3390/cryst8010003 ↗
17. Study on mechanism of crack propagation of sapphire single crystals of four different orientations under impact load and static load
18. Modern trends in crystal growth and new applications of sapphire10.1016/j.jcrysgro.2011.12.038 ↗
19. Removal mechanism of sapphire substrates (0001, 1120 and 1010) in mechanical planarization machining10.1016/j.ceramint.2017.08.194 ↗
20. Removal mechanism of 4H- and 6H-SiC substrates (0001 and 0001) in mechanical planarization machining10.1177/0954405417718595 ↗
21. Effect of grinding on strength of tetragonal zirconia and zirconia-toughened alumina10.1080/10940349708945637 ↗
22. Study on surface cracking of alumina scratched by single-point diamonds10.1007/BF00551297 ↗