UV-assisted safe etching route for the synthesis of Mo2CTx MXene from Mo–In–C non-MAX phase

Abstract We report the synthesis of Mo2CTx MXene from the Mo–In–C non-MAX phase using UV-assisted safe etching in phosphoric acid followed by ultrasonic exfoliation. The EDX and XPS spectra confirm the selective etching of indium from the non-MAX phase stoichiometry and formation of Mo2CTx MXene. The structural characterization using X-Ray diffraction revealed the Mo–In–C non-MAX phase and Mo2CTx MXene with crystallite sizes 37.26 ± 0.56 nm and 46.89 ± 0 .70 nm, respectively. The morphology of the samples analyzed using FESEM, confirmed the formation of the multilayered and monolayer 2D Mo2CTx. A slight increase in the interplanar spacing (~0.921 A) was observed in HRTEM images for Mo2CTx with respect to Mo–In–C. The synthesis of Mo2C MXene from a non- MAX phase using a hydrogen fluoride-free safe etching root unlocks the wide opportunity for the industrial bulk production of MXenes.