Low temperature synthesis of semiconducting α-Al2O3 quantum dots
Source abstract
Abstract
A simple low temperature chemical route, which was based on the reactions of aluminium nitrate and hexamethylenetetramine in aqueous medium at 473 K for 36 h, was proposed for the synthesis of α-Al2O3 quantum dots (QDs). The characterisation results from X-ray diffraction, Fourier transform infrared spectroscopy and transmission electron microscopy along with selected area diffraction pattern are revealed the formation of α-Al2O3. Ultra-violet spectra indicated that the as-synthesised α-Al2O3 has a direct band gap of about 3.6 eV and also disclosed semiconducting behaviour of α-Al2O3 QDs using defect chemistry.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Quantum Dots Synthesis And Properties · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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