journal article·2020-04

Material removal and interactions between an abrasive and a SiC substrate: A molecular dynamics simulation study

Van-Thuc Nguyen, Te-Hua Fang

Ceramics International· Volume 46· Issue 5
Publisher page

Abstract

Abstract In this paper, molecular dynamics simulation is applied to inspect the effect of sliding, rolling, vibrating and rolling plus vibrating movements of a diamond abrasive on nanotribology properties of a 4H–SiC substrate. The effect of the abrasive size, depth of polishing, sliding speed, rolling, and vibrating movements on material removal are surveyed. For the first time in literature, the rolling in x-axis, vibrating in horizontal direction, and rolling combined with vibrating movements are considered. The results present that a bigger abrasive mostly gains a lower asperity height and a higher number of atoms removed. The rolling motion in the x-axis achieves the highest number of atoms removed while the rolling motion in the reverse z-axis achieves the lowest asperity height. In the vibrating movements, the horizontal vibrating movement creates a lower asperity and a higher number of atoms removed than the vertical and the rolling plus vibrating motions. The number of atoms eliminated does not sensitive to the vibrating amplitude and the vibrating frequency. Moreover, a multi-asperities model is constructed to estimate the global-scale surface of the substrate after removing the asperities. The asperity height is removed effectively by the rolling plus vibrating motion. The surface roughness produced by rolling in x-axis movement and vibrating motions are better than other motions. This model also points out the saturated behavior of all types of movements, except the rolling plus vibrating motion. The interactions between the abrasive and the asperity could create a lengthened asperity, amorphization, new C–C bonding, clusters of atoms adhered on the abrasive surface, a high temperature at the interface, atomic strain, cleavage event and fly away atoms.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Advanced Surface Polishing Techniques · Diamond and Carbon-based Materials Research · Metal and Thin Film Mechanics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (50)

Show source-provided references
1. Controlling the defects and transition layer in SiO 2 films grown on 4H-SiC via direct plasma-assisted oxidation10.1038/srep34945 ↗
2. Application of nucleation theory to the rate dependence of incipient plasticity during nanoindentation10.1557/JMR.2004.0276 ↗
3. Incipient plasticity in 4H-SiC during quasistatic nanoindentation10.1016/j.jmbbm.2013.12.005 ↗
4. A study of deformation behavior and phase transformation in 4H-SiC during nanoindentation process via molecular dynamics simulation10.1016/j.ceramint.2018.10.261 ↗
5. Combined ultrasonic vibration and chemical mechanical polishing of copper substrates10.1016/j.ijmachtools.2011.09.009 ↗
6. Ultrasonic flexural vibration assisted chemical mechanical polishing for sapphire substrate10.1016/j.apsusc.2010.01.053 ↗
7. Material removal mechanism of two-dimensional ultrasonic vibration assisted polishing Inconel718 nickel-based alloy10.1007/s00170-018-1609-6 ↗
8. Ultrasonic-assisted anodic oxidation of 4H-SiC (0001) surface10.1016/j.elecom.2019.01.012 ↗
9. Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing10.1016/j.electacta.2018.03.184 ↗
10. Material removal model of ultrasonic elliptical vibration-assisted chemical mechanical polishing for hard and brittle materials10.1007/s00170-017-0081-z ↗
11. Study micromechanism of surface planarization in the polishing technology using numerical simulation method10.1016/j.apsusc.2007.01.115 ↗
12. Tight-binding quantum chemical molecular dynamics simulation of mechano-chemical reactions during chemical–mechanical polishing process of SiO2 surface by CeO2 particle10.1016/j.apsusc.2004.09.126 ↗
13. Comparison of morphology and mechanical properties of surfactant aggregates at water–silica and water–graphite interfaces from molecular dynamics simulations10.1016/j.jcis.2005.08.060 ↗
14. Atomistic mechanisms of Si chemical mechanical polishing in aqueous H2O2: ReaxFF reactive molecular dynamics simulations10.1016/j.commatsci.2017.02.005 ↗
15. Mechanism of material removal during nanofinishing of aluminium in aqueous KOH: a reactive molecular dynamics simulation study10.1016/j.commatsci.2018.09.042 ↗
16. Material removal model for chemical–mechanical polishing considering wafer flexibility and edge effects10.1016/j.wear.2004.01.011 ↗
17. Nanoscratch of aluminum in dry, water and aqueous H2O2 conditions10.1016/j.apsusc.2018.09.075 ↗
18. Diamond nanoscale surface processing and tribochemical wear mechanism10.1016/j.diamond.2019.02.012 ↗
19. Molecular dynamics investigations on polishing of a silicon wafer with a diamond abrasive10.1007/s00339-010-5570-y ↗
20. Yang · 2014 · 362
21. Oxidation of silicon carbide by O2 and H2O: a ReaxFF reactive molecular dynamics study, Part I10.1021/jp306391p ↗
22. ReaxFF reactive molecular dynamics study of orientation dependence of initial silicon carbide oxidation10.1021/acs.jpca.7b08983 ↗
23. Atomistic mechanisms of Cu CMP in aqueous H2O2: molecular dynamics simulations using ReaxFF reactive force field10.1016/j.commatsci.2018.09.022 ↗
24. Atomistic mechanisms of chemical mechanical polishing of a Cu surface in aqueous H2O2: tight-binding quantum chemical molecular dynamics simulations10.1021/acsami.5b11910 ↗
25. Grinding of silicon wafers: a review from historical perspectives10.1016/j.ijmachtools.2008.05.009 ↗
26. Fine grinding of silicon wafers10.1016/S0890-6955(00)00101-2 ↗
27. Local strain distribution and microstructure of grinding-induced damage layers in SiC wafer10.1007/s11664-018-6585-y ↗
28. Grinding characteristics, material removal and damage formation mechanisms in high removal rate grinding of silicon carbide10.1016/j.ijmachtools.2010.08.008 ↗
29. A study on surface grinding of 300 mm silicon wafers10.1016/S0890-6955(01)00122-5 ↗
30. Fast parallel algorithms for short-range molecular dynamics10.1006/jcph.1995.1039 ↗
31. Analytical potential for atomistic simulations of silicon, carbon, and silicon carbide10.1103/PhysRevB.71.035211 ↗
32. Visualization, analysis of atomistic simulation data with OVITO-the open visualization tool10.1088/0965-0393/18/1/015012 ↗
33. Anisotropy of single-crystal 3C–SiC during nanometric cutting10.1088/0965-0393/21/6/065004 ↗
34. Nano-scale elastic-plastic properties and indentation-induced deformation of single crystal 4H-SiC10.1016/j.jmbbm.2016.11.013 ↗
35. Material removal mechanism during porous silica cluster impact on crystal silicon substrate studied by molecular dynamics simulation10.1016/j.apsusc.2012.09.147 ↗
36. Chemical mechanical polishing: theory and experiment10.1007/s40544-013-0035-x ↗
37. Mechanical properties of nanoparticles: basics and applications10.1088/0022-3727/47/1/013001 ↗
38. Step height removal mechanism of chemical mechanical planarization (CMP) for sub-nano-surface finish10.1016/j.wear.2009.09.008 ↗
39. Effect of mechanical process parameters on friction behavior and material removal during sapphire chemical mechanical polishing10.1016/j.mee.2011.04.068 ↗
40. Numerical investigation on the influence of cutting-edge radius and grinding wheel speed on chip formation in SiC grinding10.1016/j.ceramint.2018.08.206 ↗
41. Investigation on the material removal and surface generation of a single crystal SiC wafer by ultrasonic chemical mechanical polishing combined with ultrasonic lapping10.3390/ma11102022 ↗
42. Experimental investigation on the ultrasonically assisted single-sided lapping of monocrystalline SiC substrate10.1016/j.jmapro.2019.06.008 ↗
43. Improvement in polishing effect of silicon wafer due to low-amplitude megasonic vibration assisting chemical-mechanical polishing10.1016/j.jmatprotec.2018.08.036 ↗
44. Study on chemical mechanical polishing of silicon wafer with megasonic vibration assisted10.1016/j.ultras.2017.04.005 ↗
45. Coupling effect on the removal mechanism and surface/subsurface characteristics of SiC during grinding process at the nanoscale10.1016/j.ceramint.2018.10.175 ↗
46. Planarization process of single crystalline silicon asperity under abrasive rolling effect studied by molecular dynamics simulation10.1007/s00339-012-7026-z ↗
47. Molecular dynamics simulation of SiC removal mechanism in a fixed abrasive polishing process10.1016/j.ceramint.2019.04.180 ↗
48. Molecular dynamics simulation study of deformation mechanisms in 3C–SiC during nanometric cutting at elevated temperatures10.1016/j.msea.2015.11.100 ↗
49. Chen · 2013 · 296
50. A study of the total thickness variation in the grinding of ultra-precision substrates10.1016/S0924-0136(01)01039-1 ↗