Influence of graphene on the structural and electrical properties of PCDTBT polymer
Source abstract
Abstract
Structural evolution and electrical and dielectrical properties of hybrid structures based on PCDTBT: graphene nanocomposite were reported. The insertion of the graphene layers into the PCDTBT matrix is proved by the analysis of the Raman and the XRD curves obtaining for the PCDTBT: graphene hybrid nanocomposite. In fact, the Raman spectrum of PCDTBT: graphene nanocomposites shows the appearance of a new peak in 1620 nm position corresponds to the G-band of graphene. The effect of adding different weight ratios of graphene layers added (1.5, 2, and 2.5 wt%) into PCDTBT matrix on electrical properties was discussed in dark condition. The electrical parameters such as the ideality factors (n), the barrier height (ɸb), and the series resistance (Rs) were calculated. The charge transport was evaluated by space-charge-limited conduction mechanism. The dielectrical behavior shows a strong effect of graphene addition. It increases the trap state density (Nss). Moreover, a relaxation peak appeared in the imaginary parts of impedance (Z″) in the range of (ms) indicating a dipolar relaxation type.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Organic Electronics and Photovoltaics · Conducting polymers and applications · Advanced Sensor and Energy Harvesting Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (54)
Show source-provided references
1. D. Duché, F. Bencheikh, S. Ben Dkhil, M. Gaceur, N. Berton, O. Margeat, J. Ackermann, J.J. Simon, L. Escoubas, Sol. Energy Mater. Sol. Cell. 126, 197 (2014)10.1016/j.solmat.2014.03.049 ↗
2. A. Mhamdi, F. Ben Slama Sweii, H. Saidi, F. Saidi, A. Bouazizi, J. Mol. Struct. 1160, 33 (2018)10.1016/j.molstruc.2018.01.063 ↗
3. H.J. Jhuo, P.N. Yeh, S.H. Liao, Y. Li, Y.S. Cheng, S.A. Chen, J. Chin. Chem. Soc. 61, 115 (2014)10.1002/jccs.201300333 ↗
4. E. Bundgaard, F.C. Krebs, Sol. Energy Mater. Sol. Cells 91, 954 (2007)10.1016/j.solmat.2007.01.015 ↗
5. Y.-T. Chang, S.-L. Hsu, M.-H. Su, K.-H. Wei, Adv. Funct. Mater. 17, 3326 (2007)10.1002/adfm.200700423 ↗
6. W.U. Huynh, J.J. Dittmer, A.P. Alivisatos, Science 295, 2425 (2002)10.1126/science.1069156 ↗
7. S.E. AlGarni, A.A.A. Darwish, Sol. Energy Mater. Sol. Cells 160, 335 (2017)10.1016/j.solmat.2016.10.051 ↗
8. S. Zhao, X. Pi, C. Mercier, Z. Yuan, B. Sun, D. Yang, Nano Energy 26, 305 (2016)10.1016/j.nanoen.2016.05.040 ↗
9. A. Vassilakopoulou, D. Papadatos, I. Koutselas, Appl. Mater. Today 5, 128 (2016)10.1016/j.apmt.2016.09.004 ↗
10. R. Bkakri, N. Chehata, A. Ltaief, O.E. Kusmartseva, F.V. Kusmartsev, M. Song, A. Bouazizi, J. Phys. Chem. Solids 85, 206 (2015)10.1016/j.jpcs.2015.05.020 ↗
11. N. Chehata, A. Ltaief, R. Bkakri, A. Bouazizi, Mater. Sci. Semicond. Process. 22, 7 (2014)10.1016/j.mssp.2014.02.010 ↗
12. Z. Liu, D. He, Y. Wang, H. Wu, J. Wang, Synth. Met. 160(9–10), 1036 (2010)10.1016/j.synthmet.2010.02.022 ↗
13. R. Bkakri, O.E. Kusmartseva, F.V. Kusmartsev, M. Song, A. Bouazizi, J. Lumin. 161, 264 (2015)10.1016/j.jlumin.2015.01.014 ↗
14. J. Li, F. Dierschke, J. Wu, A.C. Grimsdale, K. Müllen, J. Mater. Chem. 16(1), 96 (2006)10.1039/B512373A ↗
15. G. Sivakumar, T. Pratyusha, D. Gupta, W. Shen, Mater. Today Proc. 4(7), 6814 (2017)10.1016/j.matpr.2017.07.008 ↗
16. T. Pratyusha, G. Sivakumar, A. Yella, D. Gupta, Mater. Today Proc. 4(4), 5067 (2017)10.1016/j.matpr.2017.04.115 ↗
17. T. Pratyusha, G. Sivakumar, D. Gupta, A. Yella, Mater. Today Proc. 4(7), 6820 (2017)10.1016/j.matpr.2017.07.009 ↗
18. B.R. Brian, J. Colloid Interface Sci. 369(1), 1 (2012)10.1016/j.jcis.2011.12.016 ↗
19. M.J. Greaney, R.L. Brutchey, Mater. Today 18, 31 (2015)10.1016/j.mattod.2014.07.004 ↗
20. W. Aloui, A. Ltaief, A. Bouazizi, Mat. Sci. Semicond. Proc. 27, 170 (2014)10.1016/j.mssp.2014.06.044 ↗
21. Y. Shen, K. Li, N. Majumdar, J.C. Campbell, M.C. Gupta, Sol. Energy Mater. Sol. Cells 95(8), 2314 (2011)10.1016/j.solmat.2011.03.046 ↗
22. J. Xue, S. Uchida, B.P. Rand, S.R. Forrest, Appl. Phys. Lett. 84, 3013 (2004)10.1063/1.1713036 ↗
23. A.E. Rakhshani, J. Appl. Phys. 90, 4265 (2001)10.1063/1.1397279 ↗
24. R. Bkakri, A. Sayari, E. Shalaan, S. Wageh, A.A. Al-Ghamdi, A. Bouazizi, Superlattices Microstruct. 76, 461 (2014)10.1016/j.spmi.2014.10.016 ↗
25. M.E. Reish, S. Nam, W. Lee, H.Y. Woo, K.C. Gordon, J. Phys. Chem. C 116, 21255 (2012)10.1021/jp307552z ↗
26. P. Jha, S.P. Koiry, V. Saxena, P. Veerender, A. Gusain, A.K. Chauhan, A.K. Debnath, D.K. Aswal, S.K. Gupta, Org. Electron. 14, 2635 (2013)10.1016/j.orgel.2013.06.031 ↗
27. A.C. Ferrari, J.C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K.S. Novoselov, S. Roth, A.K. Geim, Phys. Rev. Lett. 97, 187401 (2006)10.1103/PhysRevLett.97.187401 ↗
28. M.S. Dresselhaus, A. Jorio, M. Hofmann, G. Dresselhaus, R. Saito, Nano Lett. 10, 751 (2010)10.1021/nl904286r ↗
29. D.E. Motaung, G.F. Malgas, C.J. Arendse, Synth. Met. 160(9–10), 876–882 (2010)10.1016/j.synthmet.2010.01.038 ↗
30. S. Park, A. Roy, S. Beaupre, S. Cho, N. Coates, J.S. Moon, D. Moses, M. Leclerc, K. Lee, A.J. Heeger, Nat. Photon. 3, 297 (2009)10.1038/nphoton.2009.69 ↗
31. F. Aziz, M. Hassan Sayyad, K. Sulaiman, B. Majlis, K.S. Karimov, Z. Ahmad et al., Meas. Sci. Technol. 23, 014001 (2011)10.1088/0957-0233/23/1/014001 ↗
32. Q. Zafar, K. Sulaiman, React. Funct. Polym. 105, 45 (2016)10.1016/j.reactfunctpolym.2016.05.014 ↗
33. A. Mhamdi, F.B.S. Sweii, A. Bouazizi, J. Electron. Mater. 48(1), 352 (2019)10.1007/s11664-018-6696-5 ↗
34. A. Keffous, M. Siad, S. Mamma, Y. Belkacem, C. Lakhdar Chaouch, H. Menari, A. Dahmani, W. Chergui, Appl. Surf. Sci. 218(1–4), 337 (2003)10.1016/S0169-4332(03)00642-1 ↗
35. H. Saidi, A. Walid, A. Bouazizi, B.R. Herrero, F. Saidi, Mater. Res. Express 4(3), 035007 (2017)10.1088/2053-1591/aa5fb9 ↗
36. W. Aloui, T. Adhikari, J.M. Nunzi, A. Bouazizi, K. Khirouni, Mat. Sci. Semicond. Proc. 39, 575 (2015)10.1016/j.mssp.2015.05.060 ↗
37. S. Besbes, A. Ltaief, K. Reybier, L. Ponsonnet, N. Jaffrezic, J. Davenas, H. Ben Ouada, Synth. Metals 138, 197 (2003)10.1016/S0379-6779(02)01270-5 ↗
38. A.K. Kapoor, S. Annapoorni, V. Kumar, Semicond. Sci. Technol. 23, 035008 (2008)10.1088/0268-1242/23/3/035008 ↗
39. H.C. Kao, W. Hwang, Electrical transport in solids (Pergamon, Oxford, 1981)
40. H. Kim, W. So, S. Moon, J. Korean Phys. Soc. 48(3), 441 (2006)
41. H. Saidi, W. Aloui, A. Bouazizi, J. Mater. Sci.: Mater. Electron. 29(21), 18051 (2018)
42. J.P. Tiwari, K. Shahi, Philos. Magn. 87, 4475 (2007)10.1080/14786430701551913 ↗
43. W. Aloui, A. Ltaief, A. Bouazizi, Microelectron. Eng. 129, 96 (2014)10.1016/j.mee.2014.07.026 ↗
44. L. Beji, T.B. Jomaa, Z. Harrabi, A. Laribi, A. Missaoui, A. Bouazizi, Vacuum 80(5), 480 (2006)10.1016/j.vacuum.2005.08.024 ↗
45. P. Stallinga, H.L. Gomes, M. Murgia, K. Müllen, Org. Electron. 3, 43 (2002)10.1016/S1566-1199(02)00024-1 ↗
46. C.K. Suman, S. Noh, S. Kim, S.D. Lee, C. Lee, D. Lee, J. Park, J. Korean Phys. Soc. 53, 3278 (2008)10.3938/jkps.53.3278 ↗
47. E.H. Nicollian, A. Goetzberger, Bell Syst. Tech. J. 46, 1055 (1967)10.1002/j.1538-7305.1967.tb01727.x ↗
48. S. Hamza, W. Aloui, A. Bouazizi, B. Herrero, S. Faouzi, J. Phys. Chem. Solids 107, 1 (2017)
49. W. Aloui, A. Ltaief, A. Bouazizi, Superlattices Microstruct. 75, 416 (2014)10.1016/j.spmi.2014.07.051 ↗
50. A.N. Papathanassiou, J. Grammatikakis, S. Sakkopoulos, E. Vitoratos, E. Dalas, J. Phys. Chem. Solids 63, 1771 (2002)10.1016/S0022-3697(01)00264-5 ↗
51. S. Banerjee, A. Kumar, J. Non-Cryst. Solids 358, 2990 (2012)10.1016/j.jnoncrysol.2012.07.033 ↗
52. O. Dhibi, A. Ltaief, S. Zghal, A. Bouazizi, Vacuum 99, 80 (2014)10.1016/j.vacuum.2013.03.021 ↗
53. M. Benzarti, H. Hrichi, N. Jaballah, R. BenChaâbane, M. Majdoub, H. BenOuada, Phys. B 407(7), 1051 (2012)10.1016/j.physb.2011.11.032 ↗
54. W. Aloui, T. Adhikari, J.M. Nunzi, A. Bouazizi, Mater. Res. Bull. 78, 141 (2016)10.1016/j.materresbull.2016.02.023 ↗