Diffuse phase transition and leakage current characteristics of (Pb0.25Sr0.75)TiO3 thin films prepared by a sol–gel process
Source abstract
Abstract
Nanocrystalline (Pb0.25Sr0.75)TiO3 (PSrT25) thin films were grown on Pt/Ti/SiO2/Si substrates by using a sol–gel process. The dielectric constant and loss tanδ of Au/PSrT/Pt thin-films capacitor were 345 and 0.016 at 100 kHz, respectively. The dielectric constant of PSrT film changes significantly with applied dc bias field and has a tunability of 22.7 % under an applied field of 150 kV/cm. Phase transition of the PSrT25 film has shown the diffuse-type phase transition behavior. The leakage current varied depending on the voltage polarity. At low electrical field and with Au electrode biased negatively, the Au/PSrT interface exhibits a Schottky emission characteristic, while at higher fields, Poole–Frenkel dominated the electronic conduction.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Electronic and Structural Properties of Oxides · Dielectric properties of ceramics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (36)
Show source-provided references
1. M. Jain, S.B. Majumder, R. Guo, A.S. Bhalla, R.S. Katiyar, Mater. Lett. 56, 692 (2002)10.1016/S0167-577X(02)00597-9 ↗
2. F.M. Pontes, S.H. Leal, P.S. Pizani, M.R.M.C. Santos, E.R. Leite, E. Longo, J.F. Lanciotti, T.M. Boschi, J. Mater. Res. 18, 659 (2003)10.1557/JMR.2003.0087 ↗
3. V.R. Mudinepalli, S.H. Song, B.S. Murty, J. Mater. Sci.: Mater. Electron. 24, 2141 (2013)
4. L.C. Sengupta, S. Sengupa, Mater. Res. Innovat. 2, 278 (1999)10.1007/s100190050098 ↗
5. Y. Wang, B.T. Liu, F. Wei, Z.M. Yang, J. Du, J. Alloys Comp. 475, 827 (2009)10.1016/j.jallcom.2008.08.012 ↗
6. Z. Zheng, T. Hu, Y.Y. Yao, W.J. Weng, P.Y. Han, J. Alloys Compd. 576, 121 (2013)10.1016/j.jallcom.2013.04.101 ↗
7. R. Sumang, T. Bongkarn, J. Mater. Sci. 46, 21 (2011)10.1007/s10853-011-5641-2 ↗
8. W.F. Liu, L.X. Zhang, W. Chen, S.T. Li, X.B. Ren, Appl. Phys. Lett. 99, 092907 (2011)10.1063/1.3632079 ↗
9. K.C. Verma, R.K. Kotnala, V. Verma, N.S. Negi, Thin Solid Films 518, 3320 (2010)10.1016/j.tsf.2009.10.011 ↗
10. J. Yang, X.J. Meng, M.R. Shen, J.L. Sun, J.H. Chu, J. Appl. Phys. 106, 094108 (2009)10.1063/1.3257168 ↗
11. X.T. Li, P.Y. Du, L. Zhu, C.L. Mak, K.H. Wong, Thin Solid Films 516, 5296 (2008)10.1016/j.tsf.2007.07.039 ↗
12. L.L. Chen, M.R. Shen, L. Fang, Y. Xu, Thin Solid Films 516, 1285 (2008)10.1016/j.tsf.2007.05.061 ↗
13. L. Luo, H.Z. Ren, X.G. Tang, C.R. Ding, H.Z. Wang, X.M. Chen, J.K. Jia, Z.F. Hu, J. Appl. Phys. 104, 043514 (2008)10.1063/1.2969030 ↗
14. J.L. Wang, Y.S. Lai, S.C. Liou, C.C. Tsai, B.S. Chiou, H.C. Cheng, J. Phys. D. 41, 085304 (2008)10.1088/0022-3727/41/8/085304 ↗
15. X.G. Tang, A.L. Ding, Y. Ye, W.X. Chen, Thin Solid Films 423, 13 (2003)10.1016/S0040-6090(02)00504-7 ↗
16. Y.P. Jiang, X.G. Tang, Q.X. Liu, Y.C. Zhou, L.W. Chan-Wong, Chin. Phys. Lett. 25, 3044 (2008)10.1088/0256-307X/25/10/036 ↗
17. Y. Wang, B. Liu, F. Wei, Z. Yin, J. Du, Appl. Phys. Lett. 90, 042905 (2007)10.1063/1.2431708 ↗
18. X.G. Tang, K.H. Chew, H.L.W. Chan, Acta Mater. 52, 5177 (2004)10.1016/j.actamat.2004.07.028 ↗
19. X.G. Tang, K.H. Chew, J. Wang, H.L.W. Chan, Appl. Phys. Lett. 85, 991 (2004)10.1063/1.1781734 ↗
20. J. Mendiola, M.L. Calzada, P. Ramos, M.J. Martin, F. Agullo-Rueda, Thin Solid Films 315, 195 (1998)10.1016/S0040-6090(97)00698-6 ↗
21. W.J. Mertz, Phys. Rev. 91, 513 (1953)10.1103/PhysRev.91.513 ↗
22. H.T. Martirena, J.C. Burfoot, Ferroelectrics 7, 151 (1974)10.1080/00150197408237979 ↗
23. K. Uchino, S. Nomura, Ferroelectr. Lett. Sect. 44, 55 (1982)10.1080/07315178208201875 ↗
24. R. Thomas, V.K. Varadan, S. Komarneni, D.C. Dube, J. Appl. Phys. 90, 1480 (2001)10.1063/1.1367318 ↗
25. H. Xu, M.R. Shen, L. Fang, D.L. Yao, Z.G. Gan, Thin Solid Films 493, 197 (2005)10.1016/j.tsf.2005.08.001 ↗
26. F.M. Pontes, S.H. Leal, E.R. Leite, E. Longo, P.S. Pizani, A.J. Chiquito, M.A.C. Machado, J.A. Varela, Appl. Phys. A: Mater. Sci. Proc. 80, 813 (2005)10.1007/s00339-003-2490-0 ↗
27. Q.Y. He, X.G. Tang, Microelectron. Eng. 81, 1 (2005)10.1016/j.mee.2005.02.001 ↗
28. S. Zafar, R.E. Jones, B. Jiang, B. White, V. Kaushik, S. Gillespie, Appl. Phys. Lett. 73, 3533 (1998)10.1063/1.122827 ↗
29. G.W. Dietz, M. Schumacher, R. Waser, S.K. Streiffer, C. Basceri, A.I. Kingon, J. Appl. Phys. 82, 2359 (1997)10.1063/1.366045 ↗
30. X.G. Tang, J. Wang, Y.W. Zhang, H.L.W. Chan, J. Appl. Phys. 94, 5163 (2003)10.1063/1.1611627 ↗
31. R.H. Jarman, J. Appl. Phys. 60, 1210 (1986)10.1063/1.337790 ↗
32. K. Watanabe, A.J. Hartmann, R.N. Lamb, J.F. Scott, J. Appl. Phys. 84, 2170 (1998)10.1063/1.368279 ↗
33. H. Umezawa, T. Saito, N. Tokuda, M. Ogura, S.-G. Ri, H. Yoshikawa, S.-i. Shikata, Appl. Phys. Lett. 90, 073506 (2007)10.1063/1.2643374 ↗
34. L. Pintilie, M. Alexe, J. Appl. Phys. 98, 124103 (2005)10.1063/1.2148622 ↗
35. L. Pintilie, I. Vrejoiu, D. Hesse, G. LeRhun, M. Alexe, Phys. Rev. B 75, 104103 (2007)10.1103/PhysRevB.75.104103 ↗
36. P. Zubko, D.J. Jung, J.F. Scott, J. Appl. Phys. 100, 114113 (2006)10.1063/1.2382479 ↗