Non-volatile memory with improved retention by employing multi-layered HfO2 nanocrystal charge-trap layer deposited by atomic layer deposition
Source abstract
Abstract
3D NAND flash encounters several reliability issues, particularly the retention loss caused by threshold voltage drift due to lateral charge migration to adjacent cells as its density increases with decreasing cell size and inter-cell distance. The improved retention characteristics of charge-trap memory are demonstrated by employing multi-layered HfO 2 nanocrystal (NC) charge-trap layers formed by atomic layer deposition (ALD). Formation of three-layered HfO 2 NCs with a diameter of 2–3 nm and a density of 3.2 × 10 12 cm −2 at each layer enable a wide memory window of ∼7 V and reliable 3-bit retention reaching ∼86%. The improved retention results from isolated NC geometry surrounded by Al 2 O 3 , suppressing charge loss toward all directions. Formation of multi-layered NCs via a conformal ALD process, which is compatible with fabrication of a high-aspect-ratio 3D architecture of NAND flash, provides a promising strategy to mitigate scaling-induced reliability degradation in advanced 3D NAND technologies.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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