Sulfur-enhanced surface passivation for hole-selective contacts in crystalline silicon solar cells

Effective surface passivation is pivotal for achieving high performance in crystalline silicon ( c -Si) solar cells. However, many passivation techniques in solar cells involve high temperatures and cost. Here, we report a low-cost and easy-to-implement sulfurization treatment as a surface passivation strategy. By treating p -type c -Si ( p -Si) wafers with (NH 4 ) 2 S solution, sulfur can be introduced onto the surface and passivate the dangling bonds by forming an Si–S bond. Sulfurization also contributes to a higher negative fixed charge at the p -Si/Al 2 O 3 interface and, thus, better field-effect passivation. Due to the improved passivation, sulfurization effectively enhances hole selectivity, evidenced by the substantially improved open-circuit voltage and efficiency of solar cells. Eventually, by employing sulfurization in hole-selective contacts, remarkable efficiencies of 19.85% and 22.01% are attained for NiO x - and MoO x -based passivating contact c -Si solar cells, respectively. Our work highlights a promising sulfurization strategy to enhance surface passivation and hole selectivity for dopant-free c -Si solar cells.