Twist-driven wide freedom of indirect interlayer exciton emission in MoS2/WS2 heterobilayers
Source abstract
Abstract
Theoretical and first-principal studies involving twisted two-dimensional (2D) heterobilayer transition metal dichalcogenides (TMDs) predict interlayer exciton (ILE) emission energy amplitudes (the energy difference between the lowest and the highest ILE emission energies) in the range of 100–260 meV. This can be translated into an interfacial exciton periodic potential modulation depth of 100–260 meV. However, experimental studies on twisted TMD heterobilayers have reported only a narrow depth of ILE emission of up to ∼70 meV. Here, we report a wide degree of freedom twist-angle-driven indirect ILE emission in chemical vapor deposition (CVD)-grown MoS2/WS2 vertical heterobilayers (up to ∼10%, amplitude of 120 ± 30 meV). This is attributed to the close interlayer spacing between MoS2 and WS2 courtesy of their similar hexagonal crystal symmetry with an almost similar size, coupled with interlayer spacing tuneability at various twist angles. The wide degree of freedom of ILE emission opens exciting avenues for exploring intriguing phenomena in tuneable twistronics.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · MXene and MAX Phase Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (38)
Show source-provided references
1. Van der Waals heterostructures10.1038/nature12385 ↗
2. Van der Waals heterostructures and devices10.1038/natrevmats.2016.42 ↗
3. Electronic-structure methods for twisted moire layers10.1038/s41578-020-0214-0 ↗
4. Moire is More: Access to New Properties of Two-Dimensional Layered Materials10.1016/j.matt.2020.07.001 ↗
5. Evidence for moiré excitons in van der Waals heterostructures10.1038/s41586-019-0975-z ↗
6. Resonantly hybridized excitons in moiré superlattices in van der Waals heterostructures10.1038/s41586-019-0986-9 ↗
7. Interlayer valley excitons in heterobilayers of transition metal dichalcogenides10.1038/s41565-018-0193-0 ↗
8. Mechanisms and Applications of Steady-State Photoluminescence Spectroscopy in Two-Dimensional Transition-Metal Dichalcogenides10.1021/acsnano.0c08668 ↗
9. Twist-angle-dependent interlayer exciton diffusion in WS 2–WSe 2 heterobilayers10.1038/s41563-020-0670-3 ↗
10. Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures10.1038/nnano.2014.167 ↗
11. Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures10.1038/ncomms7242 ↗
12. Valley-polarized exciton dynamics in a 2D semiconductor heterostructure10.1126/science.aac7820 ↗
13. Directional interlayer spin-valley transfer in two-dimensional heterostructures10.1038/ncomms13747 ↗
14. Shedding light on moiré excitons: A first-principles perspective10.1126/sciadv.abc5638 ↗
15. Opportunities and challenges of interlayer exciton control and manipulation10.1038/s41565-018-0301-1 ↗
16. Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures10.1038/s41566-018-0325-y ↗
17. Excitons in strain-induced one-dimensional moiré potentials at transition metal dichalcogenide heterojunctions10.1038/s41563-020-0730-8 ↗
18. Strong coupling and pressure engineering in WSe2–MoSe2 heterobilayers10.1038/s41567-020-1005-7 ↗
19. Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers10.1126/sciadv.1601459 ↗
20. Momentum-space indirect interlayer excitons in transition-metal dichalcogenide van der Waals heterostructures10.1038/s41567-018-0123-y ↗
21. Probing evolution of twist-angle-dependent interlayer excitons in MoSe2/WSe2 van der Waals heterostructures10.1021/acsnano.7b00640 ↗
22. Twisted-Angle-Dependent Optical Behaviors of Intralayer Excitons and Trions in WS2/WSe2 Heterostructure10.1021/acsphotonics.9b00855 ↗
23. Interlayer orientation-dependent light absorption and emission in monolayer semiconductor stacks10.1038/ncomms8372 ↗
24. Direct and Indirect Interlayer Excitons in a van der Waals Heterostructure of hBN/WS2/MoS2/hBN10.1021/acsnano.7b08253 ↗
25. Tuning interlayer coupling in large-area heterostructures with CVD-grown MoS2 and WS2 monolayers10.1021/nl500515q ↗
26. Quantifying Quasi-Fermi Level Splitting and Mapping its Heterogeneity in Atomically Thin Transition Metal Dichalcogenides10.1002/adma.201900522 ↗
27. Strong light-matter interactions in heterostructures of atomically thin films10.1126/science.1235547 ↗
28. Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides10.1021/acs.jpcc.5b02950 ↗
29. Electronic structures and optical properties of realistic transition metal dichalcogenide heterostructures from first principles10.1103/PhysRevB.88.085318 ↗
30. Electronic properties of the MoS 2-WS 2 heterojunction10.1103/PhysRevB.87.075451 ↗
31. Pelant · 2012
32. Interlayer interactions in 2D WS2/MoS2 heterostructures monolithically grown by in situ physical vapor deposition10.1039/C8NR07498D ↗
33. Evolution of interlayer coupling in twisted molybdenum disulfide bilayers10.1038/ncomms5966 ↗
34. Weakened interlayer coupling in two-dimensional MoSe 2 flakes with screw dislocations10.1007/s12274-019-2456-y ↗
35. Twisted MoSe2 Bilayers with Variable Local Stacking and Interlayer Coupling Revealed by Low-Frequency Raman Spectroscopy10.1021/acsnano.5b07807 ↗
36. Tailoring the electronic structure in bilayer molybdenum disulfide via interlayer twist10.1021/nl501077m ↗
37. Coupling and Interlayer Exciton in Twist-Stacked WS2 Bilayers10.1002/adom.201500301 ↗
38. Probing Angle-Dependent Interlayer Coupling in Twisted Bilayer WS210.1021/acs.jpcc.9b08602 ↗