Dirac point shift depending on amount of intercalated rhodium atoms under an epitaxial graphene grown on a SiC(0001)
Source abstract
Abstract
Rh-intercalated graphene grown on a SiC(0001) substrate was investigated using scanning tunneling microscopy, angle-resolved photoemission spectroscopy, and X-ray photoemission spectroscopy. Rh atoms deposited at room temperature on a zero-layer graphene grown on a SiC(0001) substrate could be intercalated between the zero-layer graphene and the SiC substrate after the annealing at 1000 °C, which led to the exfoliation of the zero-layer graphene from the substrate, transforming it into Rh-intercalated graphene. Then a Rh layer was formed under the graphene. While the Dirac point of the Rh-intercalated graphene was located at [[EQUATION]]0.24 eV below the Fermi energy after the annealing at 1000 °C, it shifted upward to [[EQUATION]]0.04 eV after the annealing at 1250 °C. This upward shift is attributed to the larger amount of Rh atoms intercalated after annealing at 1250 °C compared with 1000 °C.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Graphene research and applications · Topological Materials and Phenomena · Advanced Physical and Chemical Molecular Interactions
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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