journal article·2026-07

Graphene transparent current-spreading layer on carbon-supported flexible substrates for high-performance GaN LEDs

Siva Pratap Reddy Mallem, Peddathimula Puneetha, Yeojin Choi, Seung Hwan Jang, Chan Yeon Park, Daekyu An, Dong Yeon Lee, Jaesool Shim, Sung Jin An

Carbon· Volume 257
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Abstract

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OpenAlex topics: GaN-based semiconductor devices and materials · Graphene research and applications · 2D Materials and Applications

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References (54)

Show source-provided references
1. Wearable surface-lighting micro-light-emitting diode patch for melanogenesis inhibition10.1002/adhm.202201796 ↗
2. Design considerations for optogenetic applications of soft micro-LED-based device systems across diverse nervous systems
3. Smart sensing systems using wearable optoelectronics10.1002/aisy.201900144 ↗
4. Nitride micro-LEDs and beyond – a decade progress review10.1364/OE.21.00A475 ↗
5. Printed organic photovoltaic modules on transferable ultra-thin substrates as additive power sources10.1002/smtd.202200940 ↗
6. Parallel-stacked flexible organic light-emitting diodes for wearable photodynamic therapeutics and color-tunable optoelectronics10.1021/acsnano.0c06649 ↗
7. Stretchable, curvilinear electronics based on inorganic materials10.1002/adma.200902927 ↗
8. Flexible inorganic light emitting diodes based on semiconductor nanowires10.1039/C7SC02573D ↗
9. Mg-annealed anode contacts to reduce the on-resistance of GaN pn diodes formed via Mg implantation and ultra-high pressure annealing10.35848/1882-0786/adfc26 ↗
10. High-performance zero-powered InHfO/GaN photodetectors for ultraviolet image sensing systems10.1021/acsaelm.4c02279 ↗
11. Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays10.1063/1.2903153 ↗
12. Bilayer GaN nanosheet: a potential transistor channel for next decade10.1016/j.physleta.2025.131077 ↗
13. Ultra-high brightness micro-LEDs with wafer-scale uniform gan-on-silicon epilayers10.1038/s41377-024-01639-3 ↗
14. Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization10.1038/s41378-020-00198-y ↗
15. Vertical gan-on-gan micro-LEDs for near-eye displays
16. Laser slicing: a thin film lift-off method for gan-on-gan technology10.1016/j.rinp.2019.102233 ↗
17. Electrochemical etching for seamless micro-transfer printing of InGaN LEDs10.1021/acsaelm.5c00259 ↗
18. Semi-polar (20-21) GaN microwire LED fabricated by laser lift-off and mechanical bending10.1364/OL.564940 ↗
19. Enhanced performance of flexible ZnO nanowire based room-temperature oxygen sensors by piezotronic effect10.1002/adma.201301262 ↗
20. Identifying individual n- and p-type ZnO nanowires by the output voltage sign of piezoelectric nanogenerator10.1088/0957-4484/20/36/365703 ↗
21. A two-terminal optoelectronic synapses array based on the ZnO/Al2O3/CdS heterojunction with strain-modulated synaptic weight10.1002/aelm.202201068 ↗
22. The new field of nanopiezotronics10.1016/S1369-7021(07)70076-7 ↗
23. Nanopiezotronics10.1002/adma.200602918 ↗
24. Piezotronic and piezophototronic effects10.1021/jz100330j ↗
25. Strain-modulated light emission properties in a single InGaN/GaN multi-quantum-well microwire-based flexible light-emitting diode10.1002/adem.202001430 ↗
26. Achieving high-resolution pressure mapping via flexible GaN/ZnO nanowire LED array by piezo-phototronic effect10.1016/j.nanoen.2019.01.076 ↗
27. Efficiency enhancement mechanism of piezoelectric effect in long wavelength InGaN-based LED10.1039/D3CP02934D ↗
28. Piezo-phototronic effect in InGaN/GaN semi-floating micro-disk LED arrays10.1016/j.nanoen.2019.104218 ↗
29. Enhanced heat dissipation in gallium nitride-based light-emitting diodes by piezo-phototronic effect10.1021/acs.nanolett.1c00999 ↗
30. Efficiency optimization of lead-free CH3NH3SnI3-based perovskite solar cells through material and structural modifications10.1038/s41598-025-95473-1 ↗
31. Enhancing blue polymer light-emitting diode performance by optimizing the layer thickness and the insertion of a hole-transporting layer10.3390/polym16162347 ↗
32. Improved current spreading performance of a GaN-based light-emitting diode with a stair-like ITO layer10.1016/j.sse.2014.05.002 ↗
33. Current spreading structure of GaN-based vertical-cavity surface-emitting lasers10.1364/OL.499036 ↗
34. The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes10.1016/j.spmi.2017.08.026 ↗
35. Carbon nanotube-graphene composite film as transparent conductive electrode for GaN-based light-emitting diodes10.1063/1.4961667 ↗
36. GaN-based light-emitting diodes on graphene-coated flexible substrates10.1364/OE.22.00A812 ↗
37. Large-scale patterned multi-layer graphene film as transparent conducting electrodes for GaN light-emitting diodes10.1088/0957-4484/21/17/175201 ↗
38. Graphene-based transparent conducting electrodes for GaN-based light emitting diodes: challenges and countermeasures10.1016/j.nanoen.2014.12.035 ↗
39. Direct integration of polycrystalline graphene into light emitting diodes by plasma-assisted metal-catalyst-free synthesis10.1021/nn405477f ↗
40. Strain-controlled flexible graphene/GaN/PDMS sensors based on the piezotronic effect10.1021/acsami.0c06534 ↗
41. Enhancement of light output power in ultraviolet light emitting diodes using graphene film on self-assembled Au nanocluster by agglomeration process10.1063/1.4836835 ↗
42. Bi · 2011 · vol. 23 · 3202
43. Development of a universal stress sensor for graphene and carbon fibres10.1038/ncomms1247 ↗
44. Enhanced photoluminescence of flexible InGaN/GaN multiple quantum wells on fabric by piezo-phototronic effect10.1021/acsami.1c12835 ↗
45. Localized versus field effects in single InGaN quantum wells10.1063/1.1638880 ↗
46. Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers
47. Reduced junction temperature and enhanced performance of high power light-emitting diodes using reduced graphene oxide pattern10.1088/0022-3727/48/26/265102 ↗
48. InGaN/GaN core-shell single nanowire light emitting diodes with graphene-based p-contact10.1021/nl5001295 ↗
49. Schroder · 2006
50. Nakamura · 1997
51. Schubert · 2006
52. Optical properties of strained AlGaN and GaInN on GaN10.1143/JJAP.36.L177 ↗
53. Simultaneously enhancing light emission and suppressing efficiency droop in GaN microwire-based ultraviolet light-emitting diode by the piezo-phototronic effect10.1021/acs.nanolett.7b01004 ↗
54. Coaxial semipolar InGaN/GaN microwire array LED with substantially suppressed efficiency droop10.1016/j.jlumin.2019.117014 ↗