journal article·2026-06

Pushing bilayer graphene on 4H–SiC(0001) toward charge neutrality by laser annealing

Bing Lin, Bao-Kai Wang, Yun-Hui Wang, Rui-Hua He

Carbon· Volume 256
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Graphene research and applications · Diamond and Carbon-based Materials Research · Thermal properties of materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (45)

Show source-provided references
1. Laser-induced and catalyst-free formation of graphene materials for energy storage and sensing applications10.1016/j.cej.2024.154968 ↗
2. Graphene-based terahertz optoelectronics10.1016/j.optlastec.2022.108558 ↗
3. A review of laser-induced graphene: from experimental and theoretical fabrication processes to emerging applications10.1016/j.carbon.2023.118356 ↗
4. Recent progress in the synthesis of graphene and derived materials for next generation electrodes of high performance lithium ion batteries
5. Recent advances in the synthesis and modification of carbon-based 2D materials for application in energy conversion and storage10.1016/j.pecs.2018.03.001 ↗
6. Nobel Lecture: random walk to graphene10.1103/RevModPhys.83.851 ↗
7. Quasiparticle dynamics in graphene10.1038/nphys477 ↗
8. Two-dimensional gas of massless Dirac fermions in graphene10.1038/nature04233 ↗
9. Achievements and challenges of graphene chemical vapor deposition growth10.1002/adfm.202270235 ↗
10. Thermal growth of graphene: a review10.3390/coatings8010040 ↗
11. Epitaxial graphene on SiC: a review of growth and characterization10.3390/cryst6050053 ↗
12. Combining graphene with silicon carbide: synthesis and properties - a review, Semicond
13. Graphene growth on silicon carbide: a review10.1002/pssa.201600091 ↗
14. Progress of graphene growth on copper by chemical vapor deposition: growth behavior and controlled synthesis10.1007/s11434-012-5335-4 ↗
15. Epitaxial growth of graphene and their applications in devices10.3724/SP.J.1077.2011.01009 ↗
16. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide10.1038/nmat2382 ↗
17. Large-scale uniform bilayer graphene prepared by vacuum graphitization of 6H-SiC(0001) substrates10.1088/0953-8984/25/9/095002 ↗
18. Transitional structures of the interface between graphene and 6H–SiC (0001)10.1016/j.cplett.2008.11.095 ↗
19. Structural features of epitaxial graphene on SiC {0 0 0 1} surfaces10.1088/0022-3727/47/9/094017 ↗
20. The quasi-free-standing nature of graphene on H-saturated SiC(0001)10.1063/1.3643034 ↗
21. Charge-neutral epitaxial graphene on 6H–SiC(0001) via FeSi intercalation10.1016/j.carbon.2019.09.061 ↗
22. Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation10.1103/PhysRevLett.103.246804 ↗
23. Si intercalation/deintercalation of graphene on 6H-SiC(0001)10.1103/PhysRevB.85.045418 ↗
24. Structural and electronic properties of epitaxial graphene on SiC(0 0 0 1): a review of growth, characterization, transfer doping and hydrogen intercalation10.1088/0022-3727/43/37/374009 ↗
25. Epitaxial graphene on 6H-SiC and Li intercalation10.1103/PhysRevB.82.205402 ↗
26. Decoupling graphene from SiC(0001) via oxidation10.1103/PhysRevB.82.041411 ↗
27. Bi-intercalated epitaxial graphene on SiC(0001)10.1088/1367-2630/ad7f7d ↗
28. Interlayer interaction and electronic screening in multilayer graphene investigated with angle-resolved photoemission spectroscopy10.1103/PhysRevLett.98.206802 ↗
29. Laser-induced growth of large-area epitaxial graphene with low sheet resistance on 4H-SiC(0001)10.1016/j.apsusc.2020.145938 ↗
30. Surface defects state analysis of laser induced graphene from 4H-SiC10.1016/j.jmrt.2020.03.120 ↗
31. CO2-laser-induced growth of epitaxial graphene on 6H-SiC (0001)10.1002/adfm.201101413 ↗
32. Laser-synthesized epitaxial graphene10.1021/nn101796e ↗
33. Charge transfer between epitaxial graphene and silicon carbide10.1063/1.3487782 ↗
34. Controlling the electronic structure of bilayer graphene10.1126/science.1130681 ↗
35. Structural determination of bilayer graphene on SiC(0001) using synchrotron radiation photoelectron diffraction
36. Graphene growth by molecular beam epitaxy on the carbon-face of SiC10.1063/1.3526720 ↗
37. Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study10.1103/PhysRevB.77.155303 ↗
38. Monolayer charge-neutral graphene on platinum with extremely weak electron-phonon coupling10.1103/PhysRevB.92.115421 ↗
39. Control of rotation angles of multilayer graphene on SiC (0001‾) by substrate off-direction and angle10.1088/1361-648X/acdebf ↗
40. Sung-Yool Choi, Keon Jae Lee†, Laser-induced solid-phase doped graphene10.1021/nn5032214 ↗
41. High van Hove singularity extension and Fermi velocity increase in epitaxial graphene functionalized by intercalated gold clusters10.1103/PhysRevB.85.245421 ↗
42. Quasi-freestanding graphene on SiC(0001) via cobalt intercalation of zero-layer graphene10.1103/PhysRevB.104.155423 ↗
43. Continuous wafer-scale graphene on cubic-SiC(001)10.1007/s12274-013-0331-9 ↗
44. Charge carriers in few-layer graphene films10.1103/PhysRevLett.97.036803 ↗
45. Synthesis of freestanding graphene on SiC by a rapid-cooling technique10.1103/PhysRevLett.117.205501 ↗