Investigation on the epitaxial lateral outward growth of single crystal diamond using MPCVD growth technique: Simulation insights under high pressure conditions
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · High-pressure geophysics and materials · Theoretical and Computational Physics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (58)
Show source-provided references
1. Kohn · 2001
2. Single crystal diamond for electronic applications10.1016/j.diamond.2003.10.017 ↗
3. Covalently-bonded diaphite nanoplatelet with engineered electronic properties of diamond10.1002/adfm.202401949 ↗
4. High-performance self-powered UV photodetectors enabled by diamond homojunctions10.1021/acsphotonics.5c01256 ↗
5. Ultralow‐consumption ferroelectric‐like diamond transistors for advancing logic circuits
6. Experimental demonstration and transformation mechanism of quenchable two-dimensional diamond
7. Characterisation of high-quality thick single-crystal diamond grown by CVD with a low nitrogen addition10.1016/j.diamond.2006.02.005 ↗
8. High quality MPACVD diamond single crystal growth: high microwave power density regime10.1088/0022-3727/40/20/S04 ↗
9. Large-area high-quality single crystal diamond10.1557/mrs.2014.96 ↗
10. Ion-implantation, epilayer growth, and lift-off of high-quality diamond films
11. Application of dynamic and combined magnetic fields in the 300 mm silicon single-crystal growth10.1016/S1369-8001(02)00134-8 ↗
12. Evaluation of diamond mosaic wafer crystallinity by electron backscatter diffraction10.1016/j.diamond.2019.107558 ↗
13. Recent progress on controlling dislocation density and behavior during heteroepitaxial single crystal diamond growth
14. A 2-in. mosaic wafer made of a single-crystal diamond10.1063/1.4868720 ↗
15. Coessential-connection by microwave plasma chemical vapor deposition: a common process towards wafer scale single crystal diamond10.1080/26941112.2020.1869511 ↗
16. Ion bombardment induced buried lateral growth: the key mechanism for the synthesis of single crystal diamond wafers10.1038/srep44462 ↗
17. High crystalline quality heteroepitaxial diamond using grid-patterned nucleation and growth on Ir10.1016/j.diamond.2019.01.027 ↗
18. Synthesizing single-crystal diamond by repetition of high rate homoepitaxial growth by microwave plasma CVD10.1016/j.diamond.2005.09.020 ↗
19. Simulation of temperature and gas flow distributions in region close to a diamond substrate with finite thickness10.1016/j.diamond.2006.03.001 ↗
20. Simulation of microwave plasmas concentrated on the top surface of a diamond substrate with finite thickness10.1016/j.diamond.2005.10.018 ↗
21. Bai · 2022
22. Reduction of dislocations in single crystal diamond by lateral growth over a macroscopic hole10.1002/adma.201604823 ↗
23. Analyses of single crystal diamond substrates grown in a pocket substrate holder via MPACVD10.1016/j.diamond.2016.03.007 ↗
24. Exploring constant substrate temperature and constant high pressure SCD growth using variable pocket holder depths10.1016/j.diamond.2017.04.010 ↗
25. Diamond growth dynamics in a constrained system10.3389/frcrb.2024.1367715 ↗
26. Growth strategy for controlling dislocation densities and crystal morphologies of single crystal diamond by using pyramidal-shape substrates10.1016/j.diamond.2013.01.006 ↗
27. The effects of self-assembling off-angles on the homoepitaxial lateral outward growth of single-crystal diamond10.1016/j.vacuum.2023.111989 ↗
28. Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD10.1080/26941112.2021.1947750 ↗
29. The lateral outward growth of single-crystal diamonds by two different structures of microwave plasma reactor10.1039/D1CE01373D ↗
30. Numerical simulations to study growth of single-crystal diamond by using microwave plasma chemical vapor deposition with reactive (H, C, N) species10.1143/JJAP.51.090105 ↗
31. Modelling of diamond deposition microwave cavity generated plasmas10.1088/0022-3727/43/15/153001 ↗
32. Microwave plasma-activated chemical vapor deposition of nitrogen-Doped diamond. II: CH4/N2/H2 plasmas10.1021/acs.jpca.6b09009 ↗
33. Investigation of excitonic recombination in single-crystal diamond with cathodoluminescence spectroscopy10.1016/j.jlumin.2020.117428 ↗
34. In-situ microscopic observation of single-crystal diamond during chemical vapor deposition10.1016/j.diamond.2025.112154 ↗
35. F.K. De Theije, J.J. Schermer, W.J.P. Van Enckevort, Effects of Nitrogen Impurities on the CVD Growth of Diamond: Step Bunching in Theory and Experiment, n.d.
36. US20210222323A1 METHOD OF GROWING LARGER, (n.d.).
37. Modeling and numerical analyses of microwave plasmas for optimizations of a reactor design and its operating conditions10.1016/j.diamond.2005.06.037 ↗
38. Design of a new TM021 mode cavity type MPCVD reactor for diamond film deposition10.1016/j.diamond.2014.02.010 ↗
39. Interaction between the electromagnetic fields and the plasma in a microwave plasma reactor10.1063/1.1769607 ↗
40. Microwave plasma modelling in clamshell chemical vapour deposition diamond reactors10.1016/j.diamond.2022.108917 ↗
41. The IST-LISBON database on LXCat10.1088/1742-6596/565/1/012007 ↗
42. Computational study of gas-phase and surface kinetics in a clamshell type microwave plasma chemical vapor deposition reactor for diamond growth
43. Comparative study on the effect of additional gas outlet in substrate holder on diamond quality and growth rate in an microwave plasma chemical vapor deposition reactor
44. Self-consistent modeling of microwave activated N2/CH4/H2(and N2/H2) plasmas relevant to diamond chemical vapor deposition10.1088/1361-6595/ac409e ↗
45. Identification of Molecular Spectra, (n.d.).
46. Investigation of homoepitaxial growth by microwave plasma CVD providing high growth rate and high quality of diamond simultaneously
47. Enhanced deposition rate of polycrystalline CVD diamond at high microwave power densities10.1016/j.diamond.2019.107466 ↗
48. K.W. Hemawan, R.J. Hemley, Optical Emission Diagnostics of Plasmas in Chemical Vapor Deposition of single-crystal Diamond, n.d.
49. Impurity effects in crystal growth from solutions: steady states, transients and step bunch motion10.1016/j.jcrysgro.2013.11.018 ↗
50. Hydrogen plasma etching of diamond films deposited on graphite10.1016/j.diamond.2011.03.007 ↗
51. Reduction of dislocation densities in single crystal CVD diamond by confinement in the lateral sector10.1016/j.diamond.2018.02.010 ↗
52. Further improvement in high crystalline quality of homoepitaxial CVD diamond10.1016/j.diamond.2006.12.027 ↗
53. Reducing threading dislocations of single-crystal diamond via in situ tungsten incorporation
54. Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates
55. A.C. Ferrari, J. Robertson, Interpretation of Raman Spectra of Disordered and Amorphous Carbon, n.d.
56. Effect of electron-beam irradiation on the luminescent properties of nitrogen-related defects in the needle shaped diamond10.1016/j.diamond.2025.112477 ↗
57. Morphological, cathodoluminescence and thermoluminescence studies of defects in diamond films grown by HF CVD technique10.1016/j.optmat.2019.109506 ↗
58. Theoretical investigation on the interaction of nitrogen with dislocations in single crystal CVD diamond10.1016/j.diamond.2007.11.004 ↗