Graphene-substrate decoupling by S segregation. A LEEM/LEED study
Source abstract
Abstract
Abstract The growth of graphene on Ni(110) is studied with low energy electron microscopy, low energy electron diffraction (LEED) and associated methods at several sulfur coverages obtained by surface segregation and compared with growth on the clean surface. On the clean surface graphene grows nearly epitaxial with small azimuthal alignment fluctuations. The segregated S reduces the interaction between graphene and Ni, which results in the formation of several azimuthal orientations. The reduced film-substrate interaction is evident in the details of the LEED pattern, in the work function change and the energy dependence of the specular reflected intensity. This study clarifies the differences between earlier studies of graphene growth on Ni(110) and suggests using impurity surface segregation as means for decoupling of graphene from the substrate.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Graphene research and applications · Surface and Thin Film Phenomena · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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