Tunable field effect properties in solid state and flexible graphene electronics on composite high – low k dielectric
Source abstract
Abstract
We demonstrate tunable field effect properties in solid state and flexible graphene field effect devices (FEDs) fabricated using a poly(methylmethacrylate) (PMMA) and lithium fluoride (LiF) composite dielectric. Increasing the concentration of LiF in the composite dielectric increases the capacitance, which thereby reduces the operating gate voltages of FEDs significantly from 10 V to 1 V to achieve similar conductivity. Electron and hole mobility of 350 and 310 cm2/V at VD = −5 V are obtained for graphene FEDs with 10% LiF concentration in the composite. Composite dielectric also enabled excellent FEDs on flexible substrates without any significant change in mobility and resistance. Flexible FEDs with only 5% and 12% variation in mobility for 300 and 750 bending are obtained.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Graphene research and applications · Semiconductor materials and devices · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (18)
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