journal article·2019-08-01

Numerical study of the effect of diode laser-induced optical, thermal, and residual stresses on CZTS thin-films

Mohammad Shakil Ahmmed, Nazmul Huda

Journal of Laser Applications· Volume 31· Issue 3
Publisher page

Abstract

This paper presents a numerical study of the continuous wave (CW) diode laser processing of Cu2ZnSnS4 (CZTS) thin-film. The CZTS film’s structural, optical, surface morphological, and electrical properties improvement due to the localized and instantaneous heating provided by the diode laser mandates a detailed understanding of how laser processing affects the CZTS thin-film during thermal treatment to ensure a high-quality processing result as well as optimization and characterization. However, understanding of such process suffers from the restricted accessibility as most of the important phenomena occur inside the film during a very short duration time, where numerical simulations can serve as a valuable alternative to gain accessibility. This contribution, therefore, presents a numerical approach to examine the CW diode laser-induced thermal effect on the CZTS thin-film. A numerical model in OpenFOAM has been developed to elucidate the influence of laser processing parameters on the optical, heat transfer, and residual stress, as well as design architecture, of the CZTS thin-films. The model results predicted that the inappropriate settings of the laser parameters, as well as the thickness of the CZTS films, generate thermal gradient within the film and hence induce delamination and propagation of crack at the interfaces. The developed model helped in understanding the laser-induced thermal behavior of the CTZS thin-film and can be utilized as a guide to using lasers as an effective tool for fabricating the high-efficiency CZTS thin-film based solar cells.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Advanced Semiconductor Detectors and Materials · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Mechanical and Manufacturing Engineering, UNSW Sydney 1 , Sydney, NSW 2052, Australia

Sustainable Energy Systems Engineering Research Group, School of Engineering, Macquarie University 2 , Sydney, NSW 2109, Australia

References (55)

Show source-provided references
1. Effect of post-annealing atmosphere on the grain-size and surface morphological properties of pulsed laser deposited CZTS thin films10.1016/j.ceramint.2014.06.121 ↗
2. Boostering the kesterite Cu2ZnSnS4 solar cells performance by diode laser annealing10.1016/j.solmat.2017.10.009 ↗
3. Diode laser annealing of sputtered epitaxial Cu2ZnSnS4 thin films10.1002/pssr.201700033 ↗
4. The effect of thermal evaporated MoO3 intermediate layer as primary back contact for kesterite Cu2ZnSnS4 solar cells10.1016/j.tsf.2018.01.012 ↗
5. Preparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of evaporated precursors10.1016/S0927-0248(97)00119-0 ↗
6. Electrical and optical properties of Cu2ZnSnS4 thin films prepared by RF magnetron sputtering process10.1016/S0927-0248(02)00127-7 ↗
7. Crystal and electronic band structure of Cu2ZnSnS4 (X = S and Se) photovoltaic absorbers: First-principles insights10.1063/1.3074499 ↗
8. Precursors’ order effect on the properties of sulfurized Cu2ZnSnS4 thin films10.1088/0268-1242/24/10/105013 ↗
9. Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4 based thin films10.1103/PhysRevB.84.024120 ↗
10. Studies on Cu2ZnSnS4 (CZTS) absorber layer using different stacking orders in precursors thin films,10.1016/j.solmat.2011.07.005 ↗
11. Cu2ZnSnS4 thin films annealed in H2S atmosphere for solar cell absorber prepared by pulsed laser deposition10.1143/JJAP.47.602 ↗
12. Comparative study on Cu2ZnSnS4 thin films deposited by sputtering and pulsed laser deposition from a single quaternary sulfide target10.1016/j.jcrysgro.2012.09.023 ↗
13. Structural and optical properties of the new absorber Cu2ZnSnS4 thin films grown by vacuum evaporation method10.1016/j.egypro.2013.12.008 ↗
14. Electrosynthesis of CZTS films by sulfurization of CZTS precursor: Effect of soft annealing treatment10.1016/j.apsusc.2013.06.024 ↗
15. Colloidal CIGS and CZTS nanocrystals: A precursor route to printed photovoltaics10.1016/j.jssc.2011.11.002 ↗
16. Non-vacuum processed next generation thin film photovoltaics: Towards marketable efficiency and production of CZTS based solar cells10.1016/j.solener.2013.04.017 ↗
17. Characterization of CuInSe2 material and devices: Comparison of thermal and electrochemically prepared absorber layers10.1088/0022-3727/41/8/085105 ↗
18. A low-temperature order-disorder transition in thin films10.1063/1.4863685 ↗
19. The effects for the deposition temperature onto the structural, compositional and optical properties of pulsed laser ablated Cu2ZnSnS4 thin films grown on soda lime glass substrates10.1016/j.tsf.2013.05.032 ↗
20. Solution-processed Cu(In,Ga)(S,Se)2 absorber yielding a 15.2% efficient solar cell10.1002/pip.v21.1 ↗
21. Effects of grain boundaries on the performance of polycrystalline silicon solar cells
22. Effect of annealing on the structural properties of electron beam deposited CIGS thin films10.1016/j.tsf.2007.12.127 ↗
23. Effect of annealing time on the composition, microstructure, and band gap of copper-zinc-tin-sulphide10.5185/amlett ↗
24. Investigation of rapid thermal annealing on Cu(In,Ga)(Se)2 films and solar cells10.1016/j.solmat.2006.04.011 ↗
25. Efficient CuInS2 solar cells from a rapid thermal process (RTP)10.1016/S0927-0248(00)00276-2 ↗
26. CIGSS films prepared by solgel route10.1016/j.tsf.2008.10.104 ↗
27. New developments in Cu(In,Ga)(S,Se)2 thin film modules formed by rapid thermal processing of stacked elemental layers10.1016/j.solmat.2006.06.031 ↗
28. Continuous wave solid phase laser annealing of single-pot electrodeposited CuInSe2 thin films: Effects of Cu/In stoichiometry10.1063/1.4816250 ↗
29. Pulsed and continuous wave solid phase laser annealing of electrodeposited CuInSe2 thin films10.1117/12.930147 ↗
30. Pulsed laser processing of electrodeposited CuInSe2 photovoltaic absorber thin films10.1557/PROC-1268-EE04-10 ↗
31. Laser annealing behavior of a phosphorus implanted silicon substrate covered with a SiO2 film10.1063/1.326296 ↗
32. Transient optical transmission measurement in excimer laser irradiation of amorphous silicon films10.1115/1.2910645 ↗
33. Two dimensional transient analysis of absorbing thin films in laser treatments10.1115/1.521429 ↗
34. Modeling of pulsed laser irradiation of thin silicon layers10.1016/S0017-9310(05)80275-3 ↗
35. Theory of multilayers heated by laser absorption10.1115/1.2910750 ↗
36. Laser light absorption in multilayers10.1063/1.329314 ↗
37. Modelling of CW laser diode irradiation of amorphous silicon films10.1016/j.apsusc.2010.11.025 ↗
38. Thermal stresses and cracking behaviour during laser crystallization of silicon on glass for thin film solar cells10.1002/pssa.201431465 ↗
39. A homogeneous focusing system for diode lasers and its applications in metal surface modification10.1016/j.optlastec.2017.12.021 ↗
40. Finite-difference solution to the problem of temperature distribution under a moving heat source, using the concept of a quasi-stationary state10.1080/01495728308963071 ↗
41. Modeling photocurrent action spectra of photovoltaic devices based on organic thin films10.1063/1.370757 ↗
42. Thermal stresses in elastic multilayer systems10.1016/S0040-6090(02)00699-5 ↗
43. Analysis of mode I edge delamination by thermal stresses in multilayer systems10.1016/j.compositesb.2005.05.005 ↗
44. Interfacial peeling moments and shear forces at free edges of multilayers subjected to thermal stresses10.1111/jace.2006.89.issue-5 ↗
45. 2015
46. Nontoxic and abundant copper zinc tin sulfide nanocrystals for potential high-temperature thermoelectric energy harvesting10.1021/nl201718z ↗
47. Thermo-physical properties of Cu2ZnSnS4 single crystal10.1016/j.jcrysgro.2013.11.077 ↗
48. Optical constants of Cu2ZnSnS4 bulk crystals
49. Assessment of high temperature refractory metals
50. Optical properties of Al, Fe, Ti, Ta, W, and Mo at submillimeter wavelength10.1364/AO.27.001203 ↗
51. Large-area diode laser defect annealing of polycrystalline silicon solar cells10.1109/TED.2012.2208648 ↗
52. Optical constants of silica glass from extreme ultraviolet to far infrared at near room temperature10.1364/AO.46.008118 ↗
53. Effects of 2nd phases, stress, and Na at the Mo/Cu2ZnSnS4 interface10.1557/PROC-1268-EE03-03 ↗
54. Elastic and thermophysical properties of stannitetype Cu2ZnSnS4 and Cu2ZnSnSe4 from first principles calculations10.1007/s40195-012-0248-4 ↗
55. Thermal stress analysis of a bimaterial strip subject to an axial temperature gradient10.1115/1.3226548 ↗