Characterization of High Temperature Resistivity and Full Matrix Material Coefficient of LGT Crystals
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Abstract
应用微纳米材料研究所, 北京 100049; 2. 中国科学院 上海硅酸盐研究所, 上海 200050) 摘 要:基于声表面波(Surface acoustic wave, SAW)技术的无线无源器件是在极端条件下工作的首选传感器,其中 压电衬底在高温环境下的稳定性是影响 SAW 器件性能的关键因素。钽酸镓镧(LGT)晶体因电阻率高和稳定性好, 是 SAW 器件理想的高温压电衬底。为了全面评估 LGT 晶体的高温电阻率和材料系数稳定性,本工作分别测试了 纯 LGT 和掺铝钽酸镓镧(LGAT)晶体在氧气、氮气和氩气气氛中的高温电阻率,并采用超声谐振谱(Resonant ultrasound spectroscopy, RUS)技术定征了纯 LGT 晶体高温全矩阵材料系数。电阻率测试结果显示,在不同气氛下 LGT 晶体的高温导电行为明显不同,纯 LGT 晶体在 400 至 525 ℃范围内,氮气中的电阻率最高;在 525 至 700 ℃范 围内,氩气气氛中的电阻率最高,在 700 ℃时电阻率高达 2.05×10 6 Ω•cm;而对于 LGAT 晶体,在整个测试温度区 间氮气中的电阻率均最高,700 ℃电阻率达 1.
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OpenAlex topics: Electronic Packaging and Soldering Technologies · Silicon Carbide Semiconductor Technologies · Advanced MEMS and NEMS Technologies
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