Growth of α-Al2O3: C Crystal by Edge-Defined, Film-Fed Growth Technique
Source abstract
Abstract
以高纯Al2O3为原料,利用石墨发热体和石墨保温桶为碳源,采用导模法生长了α-Al2O3∶C晶体,研究了氢气退火后得到的α-Al2O3∶C晶体的热致发光和光致受激发光特性.α-Al2O3∶C晶体在460K具有单一一级动力学热致发光峰,热致发光发射波长位于415nm.α-Al2O3∶C晶体的光致受激发光曲线呈指数衰减,衰减曲线由快衰减和慢衰减两部分组成.α-Al2O3∶C晶体的热致发光和光致受激发光剂量响应曲线具有线性-亚线性-饱和的特点,其中热致发光剂量响应在5×10^-6 -0.2Gy范围内呈现良好的线性关系,饱和剂量为10Gy;光致受激发光剂量响应在5×10^-6 -10Gy范围内呈现良好的线性关系,饱和剂量为30Gy.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Optical Coatings and Gratings · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (10)
Show source-provided references
1. Nakajima T10.1016/0029-554X(78)90601-8 ↗
2. Lee K H
3. Summers G P
4. Yukihara E G10.1016/S1350-4487(03)00077-5 ↗
5. Labelle H E10.1016/0025-5408(71)90007-9 ↗
6. Akselrod M S
7. Akselrod M S
8. Cameron J R
9. Akselrod M S
10. Markey B G10.1016/1350-4487(94)00119-L ↗