Electronic structure of MoO3−x/graphene interface
Source abstract
Abstract
Abstract The interfacial electronic structure of MoO 3− x /graphene has been investigated using photoemission spectroscopy. The experimental data showed that upon deposition of MoO 3− x , the Fermi level of graphene shifts downward gradually from its Dirac point due to the p-type doping effect. From the Fermi level shift of −0.28 eV, the hole density of graphene was estimated to be 5.44 × 10 12 cm −2 . The formation of surface negative dipole due to electron transfer from graphene to the deposited MoO 3− x films increased the sample′s work function. The existence of gap states in MoO 3− x induced by oxygen vacancies greatly reduced the hole injection barrier at the MoO 3− x /graphene interface.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Graphene research and applications · Transition Metal Oxide Nanomaterials · Advanced Memory and Neural Computing
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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