Excimer‐laser annealing for low‐temperature poly‐Si TFTs

Abstract For excimer laser annealing (ELA), energy density, number of pulses, beam uniformity, and condition of initial amorphous Si (a‐Si) films are significant factors contributing to the final micro structure and the performance of low‐temperature polycrystalline Si (LTPS) TFTs. Although the process and equipment have been significantly improved, the environmental factors associated with initial amorphous Si (a‐Si) films and process conditions are yet to be optimized.