Semitransparent light-emitting diodes based on InP/ZnSeS/ZnS quantum dots with Al/Ag double metal layer as top electrode

Transparent light-emitting diodes (LEDs) based on colloidal quantum dots (QDs) have great potential for the future of transparent display technology due to their unique properties. In the long term, transparent LEDs based on eco-friendly indium phosphide (InP) QDs are one of the most promising options. However, the performance of transparent or semitransparent LED devices based on InP QDs is currently relatively poor. Further research is needed to advance the performance of transparent or semitransparent LED devices based on InP QDs. In this study, a semitransparent LED device based on InP/ZnSeS/ZnS QDs was successfully demonstrated by using ultra-thin aluminum/silver (Al/Ag) bilayer films as a transparent electrode, achieving a transmittance of over 50% at 550 nm. The overall maximum brightness, maximum current efficiency and maximum external quantum efficiency of the whole device are 3209 cd m−2, 15.96 cd A−1 and 3.79%, respectively. This work will contribute to the practical application of semitransparent quantum dot light-emitting diodes based on InP QDs.