Characteristics of poly‐Si TFTs required for System‐on‐Glass analog circuits
Source abstract
Abstract
Abstract In this paper, we investigate on the characteristics of poly‐Si TFTs reuired for the implementation of analog circuits to be integrated with System‐on‐Glass (SoG). Matching requirements in terms of resistor values, threshold voltage and mobility of poly‐Si TFTs are derived as a function of the resolution of display system. Effective mobility of poly‐Si TFTs required for the realization of source driver is analyzed for various panel sizes.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · Silicon Nanostructures and Photoluminescence
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References (12)
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1. Matsueda Y. · SID Digest · 1998 · 87910.1889/1.1833904 ↗
2. Matsudea Y. · Proc. of IDW · 2000 · 171
3. Han S. S. · SID Digest · 2003 · 20810.1889/1.1832239 ↗
4. Nishibe Tohru · Proc. of Eurodisplay · 2002 · 269
5. Yang G. Y. · IEEE Trans. Electron Devices · 1999 · 46 · 16510.1109/16.737456 ↗
6. Sasaki Hisashi · SID Digest · 2003 · 93610.1889/1.1832438 ↗
7. Lu Chih‐Wen · SID Digest · 2002 · 281
8. Itou R. · Proc. IEEE Symp. · 2001 · 417
9. Lee S. W. · SID Digest · 1999 · 7610.1889/1.1834139 ↗
10. Jeon J. · Asia Display · 1998 · 164
11. Kida Y. · Proc. of Eurodisplay · 2002 · 831
12. Yoo Y. S. · SID Digest · 2004 · 146010.1889/1.1825776 ↗