Physics‐based OLED analog behavior modeling
Source abstract
Abstract
Abstract In this study, a physical OLED analog behavior model for SPICE simulation was described using the Verilog‐A language. The model was presented through theoretical equations for the J‐V characteristics of OLED derived according to the internal‐carrier emission equation based on a diffusion model at the Schottky barrier contact, and the mobility equation based on the Pool‐Frenkel model. The accuracy of this model was examined by comparing it with the results of the device simulation that was conducted.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Organic Light-Emitting Diodes Research · Thin-Film Transistor Technologies · Organic Electronics and Photovoltaics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (10)
Show source-provided references
1. Malliaras G. G. · J. Appl. Phys. · 1999 · 85 · 742610.1063/1.369373 ↗
2. 10.1063/1.36652210.1063/1.366522 ↗
3. 10.1063/1.36814610.1063/1.368146 ↗
4. Sze, S. M. 1981. Physics of Semiconductor Device (Wiley‐Interscience , 2nd edition 254New York
5. Kao, K. C and Hwang, W. 1981. “Electrical transport in solids”. 145Oxford: Pergamon Press.
6. 10.1103/PhysRev.155.65710.1103/PhysRev.155.657 ↗
7. 10.1103/PhysRev.54.64710.1103/PhysRev.54.647 ↗
8. 10.1063/1.166106510.1063/1.1661065 ↗
9. 10.1088/0022-3727/3/2/30810.1088/0022-3727/3/2/308 ↗
10. Barba D. F · Appl. Phys. · 1971 · 4 · 1812