journal article·2015-02

The sheet resistance of graphene under contact and its effect on the derived specific contact resistivity

Song-ang Peng, Zhi Jin, Peng Ma, Da-yong Zhang, Jing-yuan Shi, Jie-bin Niu, Xuan-yun Wang, Shao-qing Wang, Mei Li, Xin-yu Liu, Tian-chun Ye, Yan-hui Zhang, Zhi-ying Chen, Guang-hui Yu

Carbon· Volume 82
Publisher page

Abstract

Abstract It is normally assumed that the sheet resistances under and outside the metal contact are identical when deriving specific contact resistivity of graphene from transmission line model. We considered the contact end resistance and obtained the sheet resistance under contact of 670 Ω/□, which is much different from that outside the contact of 1840 Ω/□. Considering the difference, the value of specific contact resistivity is determined to be 3.3 × 10 −6 Ω cm 2 , which is three times as large as the unmodified value. This indicates that the difference between the sheet resistances under and outside the contact affects the derived specific contact resistivity of graphene significantly.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Graphene research and applications · Surface and Thin Film Phenomena · Advancements in Battery Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (36)

Show source-provided references
1. Electric field effect in atomically thin carbon films10.1126/science.1102896 ↗
2. High-speed graphene transistors with a self-aligned nanowire gate10.1038/nature09405 ↗
3. State-of-the-art graphene high-frequency electronics10.1021/nl300904k ↗
4. 100-GHz transistors from wafer-scale epitaxial graphene10.1126/science.1184289 ↗
5. Wafer-scale graphene integrated circuit10.1126/science.1204428 ↗
6. High-frequency graphene voltage amplifier10.1021/nl2016637 ↗
7. High-frequency, scaled graphene transistors on diamond-like carbon10.1038/nature09979 ↗
8. Impact of contact resistance on the transconductance and linearity of graphene transistors10.1063/1.3582613 ↗
9. Impact of graphene interface quality on contact resistance and RF device performance10.1109/LED.2011.2155024 ↗
10. Double contacts for improved performance of graphene transistors10.1109/LED.2011.2173154 ↗
11. Schroder · 2006 · 135
12. Contact graphene10.1063/1.3549183 ↗
13. Contact resistance in top-gated graphene field-effect transistors
14. The origins and limits of metal–graphene junction resistance10.1038/nnano.2011.6 ↗
15. Contact resistance in few and multilayer graphene devices10.1063/1.3290248 ↗
16. Ultra-low resistance ohmic contacts in graphene field effect transistors10.1063/1.4719579 ↗
17. Ultraviolet/ozone treatment to reduce metal–graphene contact resistance
18. Reducing contact resistance in graphene devices through contact area patterning10.1021/nn400671z ↗
19. Doping graphene with metal contacts10.1103/PhysRevLett.101.026803 ↗
20. First-principles study of the interaction and charge transfer between graphene and metals10.1103/PhysRevB.79.195425 ↗
21. Metal–graphene–metal sandwich contacts for enhanced interface bonding and work function control10.1021/nn301241p ↗
22. Determination of work function of graphene under a metal electrode and its role in contact resistance10.1021/nl300266p ↗
23. Is graphene contacting with metal still graphene?
24. Density-of-states limited contact resistance in graphene field-effect transistors10.7567/JJAP.50.070108 ↗
25. Raman spectrum of graphene and layers10.1103/PhysRevLett.97.187401 ↗
26. Study of AlN dielectric film on graphene by Raman microscopy10.1063/1.3271676 ↗
27. A facile route to recover intrinsic graphene over large scale10.1021/nn3017603 ↗
28. Reducing extrinsic performance-limiting factors in graphene grown by chemical vapor deposition10.1021/nn300107f ↗
29. Conductance asymmetry of graphene p–n junction10.1109/TED.2009.2017646 ↗
30. Transport measurements across a tunable potential barrier in graphene10.1103/PhysRevLett.98.236803 ↗
31. Quantum hall effect in a gated-controlled p–n junction of graphene10.1126/science.1144657 ↗
32. Carrier density modulation in graphene underneath Ni electrode10.1063/1.4813216 ↗
33. Intrinsic graphene/metal contact
34. Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
35. Obtaining the specific contact resistance from transmission line model measurements10.1109/EDL.1982.25502 ↗
36. Models for contacts to planar devices10.1016/0038-1101(72)90048-2 ↗