The growth mechanism of few-layer graphene in the arc discharge process
Source abstract
Abstract
Abstract While few-layered graphene (FG) has been synthesized by several different arc-discharge methods, its growing mechanism has hardly been studied by experiment. Here, we have investigated systematically its growth mechanism using the arc-discharge method under different environments including helium, oxygen-helium and hydrogen-helium. The results indicate that FG can only be produced in the presence of reactive gases, implying that the growing mechanism of few-layered graphene involves graphite evaporation and reactive-gas-confining crystallization of the evaporated carbon clusters. The key factor inducing the discrepancies in FG synthesis under different buffer gases can be assigned to the reactivity of corresponding gases.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Graphene research and applications · Diamond and Carbon-based Materials Research · Carbon Nanotubes in Composites
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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