Emission characteristics of 0.7” monochrome MOSFET‐controlled field emission displays in a high vacuum chamber

Abstract MCFEDs (MOSFET‐Contoolled Field Emission Displays) were fabricated to evaluate the validity of MCFEA for display application. The electrical properties of FEAs (Field Emitter Arrays), HVMOSFETs (High‐Voltage MOSFETs), and MCFEAs (MOSFET‐Controlled Field Emitter Arrays) were measured. The extraction gate voltage of the FEAs to obtain the anode current of 10 nA/tip was around 71 V. The breakdown voltages of the HVMOSFETs were above 81 V for all the samples. The I‐V characteristics of the MCFEAs showed that the emission currents of the FEAs were well controlled depending on the control gate voltages of the HVMOSFETs. To avoid the harmful effects during the packaging process, the performance of the MCFEDs was evaluated in a high vacuum chamber. The emission images of the MCFEDs were controlled through very‐through operation. From the comparison with a conventional FED, it was proven that the poor uniformity of FED could be improved through the integration with HVMOSFET.