Enhanced crystallization of amorphous Si using viscous Ni solution and microwave annealing

Abstract A viscous Ni solution was coated over amorphous Si thin film for evenly spread of Ni metal source. The Ni solution was prepared by dissolving NiCl2 into 1N HCl and mixing with propylene glycol. NiCl2 and Ni were deposited on the amorphous film after oven dry and they enabled to obtain a uniform crystallization. The crystallization using the viscous Ni solution was a Ni‐silicide mediated process, the same process used with Ni metal layer. The crystallization temperature was lowered to 480 °C by the synergy effect of silicide‐mediated crystallization and microwave‐induced crystallization. Lateral crystallization was also enhanced such that the velocity of lateral crystallization by microwave annealing became faster than by furnace annealing.