Dopant‐activation and damage‐recovery of Ion‐shower‐doped poly‐Si through PH ₃ /H ₂ after furnace annealing

Abstract Ion shower doping with a main ion source of P2Hx using a source gas mixture of PH3/H2 was conducted on excimerlaser‐annealed (ELA) poly‐Si. The crystallinity of the as‐implanted samples was measured using a UV‐transmittance. The measured value of as‐implanted damage was found to correlate well with the one calculated through/obtained from TRIMcode simulation. The sheet resistance was found to decrease as the acceleration voltage increased from 1 kV to 15 kV at a doping time of 1 min. However, it increases as the acceleration voltage increases under severe doping conditions. Uncured damage after furnace annealing is responsible for the rise in sheet resistance.