Positron effective mass and positronium work function in ZnxCd1−xS
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OpenAlex topics: Muon and positron interactions and applications · Quasicrystal Structures and Properties · Semiconductor materials and interfaces
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References (64)
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1. Chelikowsky J R 2011 in P Bhattacharya, R Fornari and H Kamimura (eds) Comprehensive semiconductor science and technology, physics and fundamental theory Amsterdam, Elsevier Science p 1
2. Edgar J H 2018 in T-T Fang (ed) Elements of structures and defects of crystalline materials 43 98110.1557/mrs.2018.312 ↗
3. Bakin A and Wang A 2011 in P Bhattacharya, R Fornari and H Kamimura (eds) Comprehensive semiconductor science and technology, materials, preparation, and properties Amsterdam, Elsevier Science p 1
4. Ikhmayies S 2014 in S Ikhmayies (ed) Advances in the II–VI compounds suitable for solar cell applications Signpost Publisher p 1
5. Tamargo Maria C 2002 in M C Tamargo (ed) Optoelectronic properties of semiconductors and superlattices, II–VI semiconductor materials and their applications New York, Imprint Routledge p 1
6. Bouarissa N 1998 Infrared Phys. Technol. 39 26510.1016/S1350-4495(98)00012-7 ↗
7. Mnasri S, Abdi-Ben S, Sfina Nasrallah N, Bouarissa N and Said M 2009 Semicond. Sci. Technol. 24 09500810.1088/0268-1242/24/9/095008 ↗
8. Ferahtia S, Saib S, Bouarissa N and Benyettou S 2014 Superlattice Microstruct. 67 8810.1016/j.spmi.2013.12.021 ↗
9. Isshiki M and Wang J 2017 in S Kasap and P Capper (eds) Wide-bandgap II-VI semiconductors: growth and properties Verlag-Springer International Publishing10.1007/978-3-319-48933-9_16 ↗
10. Tomashyk V, Feychuk P and Shcherbak L 2013 Ternary alloys based on II–VI semiconductor compounds 1st edn CRC Press, Boca Raton10.1201/b15302 ↗
11. Lei X, Wong C H, Buntov E A, Zatsepin A F, Zhao G J and Boukhvalov D W 2019 Optik 178 69110.1016/j.ijleo.2018.10.060 ↗
12. Hurma T 2018 Optik 174 32410.1016/j.ijleo.2018.08.029 ↗
13. Hernández Castillo R, Acosta M, Riech I, Santana-Rodríguez G, Mendez-Gamboa J, Acosta C et al 2017 Optik 148 9510.1016/j.ijleo.2017.09.002 ↗
14. Mezrag F, Kara Mohamed W and Bouarissa N 2010 Physica B 405 227210.1016/j.physb.2010.02.024 ↗
15. Othman M S H and Elkenany E B 2022 Opt. Quantum Electro. 54 80710.1007/s11082-022-04203-8 ↗
16. Mishjil K A, Othman M, Abdulsada A H, Rahid H G and Habubi N F 2022 J. Phys. Conf. Series 2322 01208910.1088/1742-6596/2322/1/012089 ↗
17. Elkenany E B and Othman M S H 2021 Phys. Scr. 96 12571810.1088/1402-4896/ac3270 ↗
18. Bouarissa N 2000 Mater. Chem. Phys. 65 10710.1016/S0254-0584(00)00219-4 ↗
19. Kassali K and Bouarissa N 2000 Microelectron Eng. 54 27710.1016/S0167-9317(00)00409-3 ↗
20. Palmer D W 2019 Properties of the II-VI compound semiconductors https://www.semiconductors.co.uk/
21. Benmakhlouf F, Bechiri A and Bouarissa N 2003 Solid State Electron 47 133510.1016/S0038-1101(03)00009-1 ↗
22. Adachi S 2005 Properties of group-IV, III–V, and II–VI semiconductors Chichester, Wiley10.1002/0470090340 ↗
23. Feng Y P, Teo K L, Li M F, Poon H C, Ong C K and Xia J B 1993 J. Appl. Phys. 74 394810.1063/1.354462 ↗
24. Wiberg E and Frederick H A 2001 Inorganic chemistry New York, Elsevier
25. Lunz U, Schumacher C, Nurmberger J, Schull K, Gerhard A, Schüssler U et al 1997 Semicond. Sci. Technol. 12 97010.1088/0268-1242/12/8/007 ↗
26. Jaros M 1985 Rep. Prog. Phys. 48 109110.1088/0034-4885/48/8/001 ↗
27. Kassali K and Bouarissa N 2000 Solid State Electron 44 50110.1016/S0038-1101(99)00265-8 ↗
28. Adachi S 2009 Properties of semiconductor alloys: Group-IV, III–V and II–VI semiconductors Wiley, Chichester10.1002/9780470744383 ↗
29. Chen P, Nicholls J E, O’Neill M, Hogg J H C, Lunn B, Ashenford D E et al 1998 Semicond. Sci. Technol. 13 143910.1088/0268-1242/13/12/019 ↗
30. Torres J, Cisneros J I, Gordillo G and Alvarez F 1996 Thin Solid Films 289 23810.1016/S0040-6090(96)08931-6 ↗
31. Mäkinen J, Corbel C, Hautojärvi P, Vehanen A and Mathiot D 1990 Phys. Rev. B 42 175010.1103/PhysRevB.42.1750 ↗
32. Schultz P J and Lynn K G 1988 Rev. Mod. Phys. 60 70110.1103/RevModPhys.60.701 ↗
33. Boev O V, Puska M J and Nieminen R M 1987 Phys. Rev. B 36 778610.1103/PhysRevB.36.7786 ↗
34. Bouarissa N 2002 Phys. Stat. Sol. 231 39110.1002/1521-3951(200206)231:2<391::AID-PSSB391>3.0.CO;2-J ↗
35. Bouarissa N 2000 Philos. Mag. B 80 1743
36. Brandt W and Dupasquier A (eds) 1983 Positron solid state physics North-Holland, Amsterdam
37. Valkealahti S and Nieminen R M 1984 Appl. Phys. A 35 5110.1007/BF00620300 ↗
38. Jensen K O, Walker A B and Bouarissa N 1990 in P J Schultz, G R Massoumi and P J Simpson (eds) Positron beams for solids and surfaces (AIP Conf. Proceedings) vol. 218 (New York: American Institute of Physics) p 1910.1063/1.40184 ↗
39. Mills A P Jr 1995 in A Dupasquier and A P Mills Jr (eds) Positron spectroscopy of solids (Amsterdam: IOS) p 209
40. Krause-Rehberg R and Leipner H S 1999 Positron annihilation in semiconductors, defect studies Berlin, Springer p 37810.1007/978-3-662-03893-2 ↗
41. Bouarissa N and Walker A B 2000 Inter. J. Modern Phys. B 14 1603
42. Nieminen R M 1995 in A Dupasquier and A P Mills Jr (eds) Positron spectroscopy of solids Amsterdam: IOS p 443
43. Puska M J and Nieminen R M 1994 Rev. Mod. Phys. 66 84110.1103/RevModPhys.66.841 ↗
44. Nieminen R M and Hodges C H 1976 Solid State Commun. 18 11110.1016/0038-1098(76)91254-0 ↗
45. Bergersen B, Pajanne E, Kubica P, Stott M J and Hodges C H 1974 Solid State Commun. 15 137710.1016/0038-1098(74)91384-2 ↗
46. Kuriplach J, Sob M, Brauer G, Anwand W, Nicht E-M, Coleman P G et al 1999 Phys. Rev. B 59 194810.1103/PhysRevB.59.1948 ↗
47. Soininen E, Huomo H, Huttunen P A, Mäkinen J, Vehanen V and Hautojärvi P 1990 Phys. Rev. B 41 622710.1103/PhysRevB.41.6227 ↗
48. Cohen M L and Chelikowsky J R 1989 Electronic structure and optical properties of solids New York, Springer-Verlag
49. Madelung O (ed) 1996 Semiconductors-basic data Berlin, Springer10.1007/978-3-642-97675-9 ↗
50. Kassali K and Bouarissa N 2002 Mater. Chem. Phys. 76 25510.1016/S0254-0584(01)00546-6 ↗
51. Kobayasi T and Nara H 1993 Bull. Coll. Med. Sci. Tohuku Univ. 2 7
52. Bouarissa N 2010 Mater. Chem. Phys. 124 33610.1016/j.matchemphys.2010.06.043 ↗
53. Bechiri A and Bouarissa N 2006 Superlatt. Microstr. 39 47810.1016/j.spmi.2005.11.002 ↗
54. Bouarissa N 2000 J. Phys. Chem. Solids 61 10910.1016/S0022-3697(99)00225-5 ↗
55. Bouarissa N, Ajmal Khan M, Algarni H and Khan S A 2020 Rad. Phys. Chem. 171 10872110.1016/j.radphyschem.2020.108721 ↗
56. Puska M J, Lanki P and Nieminen R M 1989 J. Phys. Condens. Matter 1 608110.1088/0953-8984/1/35/008 ↗
57. Panda B K and Brauer G 1999 Acta Phys. Pol. A 95 64110.12693/APhysPolA.95.641 ↗
58. Siethoff H 1998 Phys. Stat. Sol. (b) 205 R310.1002/(SICI)1521-3951(199801)205:1<R3::AID-PSSB99993>3.0.CO;2-N ↗
59. Puska M J, Mäkinen S, Manninen M and Nieminen R M 1989 Phys. Rev. B 39 766610.1103/PhysRevB.39.7666 ↗
60. Phillips J 1973 Bonds and bands in semiconductors Academic, New York
61. Bouarissa N and Aourag H 1999 Infrared Phys. Technol. 40 34310.1016/S1350-4495(99)00020-1 ↗
62. Bouarissa N 2006 J. Phys. Chem. Solids 67 144010.1016/j.jpcs.2006.01.111 ↗
63. Panda B K, Shan Y Y, Fung S and Beling C D 1995 Phys. Rev. B 52 569010.1103/PhysRevB.52.5690 ↗
64. Bouarissa N, Mezrag F and Turki-Kamoun N 2021 Eur. Phys. J. Plus 136 78410.1140/epjp/s13360-021-01526-5 ↗