Giant magnetoresistance effect in co-based spin-valves structure

At room temperature, we consider the transport properties in the magnetic spin-valve for electronic current-in-plane of the surfaces. The transport properties are treated by solving the Boltzmann equation. We discuss, in this study, the influence of interface quality on trends in residual resistivities of the two magnetic configurations and giant magnetoresistance effect while introducing the different aspects of phenomenological electron scattering. The scattering by vacuum-metal-free surfaces is assumed to be completely specular. The present results emphasize that the conduction electron transport in the case of ultra-thin films is strongly affected by an uncorrelated interface state. The examination of the angular dependence on the interface parameters helped us to understand all the results obtained.