Angle- and polarization-dependent optical switching in porous silicon-based coupled photonic microcavities
Source abstract
Abstract
Porous silicon (pSi)-based coupled photonic microcavities (MCs) are highly desirable for tunable optical transmission. The coupled microcavities (CMCs) are designed by stacking three cavity layers with a reflection of above 60–70% at λc = 685 nm. The position of the cavity in transmission mode is found to shift towards shorter wavelength regions with an increase in the angle of incidence for s-, p- and un-polarizations, which might be due to a decrease in effective thickness of pSi layer subjected to oblique incident angles. The line-width and intensity of transmission modes are found to be highly polarization (i.e., s-, p- and un-polarizations) dependent at a higher angle of incidence. Further, ~100 nm shift in the transmission mode towards lower wavelength has been achieved by doping of Ag nanoparticles into MC. This is a feasible approach to tune the optical cavity mode to desired wavelengths for applications in optical switching.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Nanostructures and Photoluminescence · Nanowire Synthesis and Applications · Photonic Crystals and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (34)
Show source-provided references
1. Vendamani V S, Khan S A, Dhanunjaya M, Pathak A P and Nageswara Rao S V S 2017 Micropor. Mesopor. Mat. 246 8110.1016/j.micromeso.2017.03.015 ↗
2. Vendamani V S, Pathak A P and Nageswara Rao S V S 2015 Opt. Mater. 48 6610.1016/j.optmat.2015.07.012 ↗
3. Vendamani V S, Dang Z Y, Ramana P, Pathak A P, Ravi Kanth Kumar V V, Breese M B H et al 2015 Nucl. Inst. Meth. B 358 10510.1016/j.nimb.2015.05.040 ↗
4. Vendamani V S, Hamad S, Saikiran V, Pathak A P, Venugopal Rao S, Ravi Kanth Kumar V V et al 2015 J. Mat. Sci. 50 166610.1007/s10853-014-8727-9 ↗
5. Vendamani V S, Nageswara Rao S V S and Pathak A P 2014 Appl. Surf. Sci. 320 33410.1016/j.apsusc.2014.08.108 ↗
6. Hamad S, Podagatlapalli G K, Vendamani V S, Nageswara Rao S V S, Pathak A P, Tewari S P et al 2014 J. Phys. Chem. C 118 713910.1021/jp501152x ↗
7. Vendamani V S, Pathak A P and Nageswara Rao S V S 2013 Nucl. Inst. Meth. B 315 18810.1016/j.nimb.2013.04.085 ↗
8. Lehmann V 2002 Electrochemistry of silicon: instrumentation, science, materials, and applications (Munchen, Germany: Wiley-VCH Verlag GmbH) 28610.1002/3527600272 ↗
9. Lenshin A S, Seredin P V, Kashkarov V M and Minakov D A 2017 Mater. Sci. Semicond. Process. 64 7110.1016/j.mssp.2017.03.020 ↗
10. Sawada S, Hamada N and Ookubo N 1994 Phys. Rev. B 48 523610.1103/PhysRevB.49.5236 ↗
11. Azimi S, Song J, Dang Z Y and Breese M B H 2013 J. Appl. Phys. 114 05351710.1063/1.4817658 ↗
12. Wolkin M V, Jorne J, Fauchet P M, Allan G and Delerue C 1998 Phys. Rev. Lett. 82 19710.1103/PhysRevLett.82.197 ↗
13. Kumar P International Scholarly Research Notices 2011 https://doi.org/10.5402/2011/16316810.5402/2011/163168 ↗
14. Mangaiyarkarasi D, Breese M B H, Ow Y S and Vijila C 2006 Appl. Phys. Lett. 89 02191010.1063/1.2219989 ↗
15. Pavesi L 1997 Rivista Del Nuovo Cimento 20 110.1007/BF02877374 ↗
16. Azimi S, Breese M B H, Dang Z Y, Yan Y, Ow Y S and Bettiol A A 2012 J. Micromech. Microeng. 22 01501510.1088/0960-1317/22/1/015015 ↗
17. Teo E J, Breese M B H, Bettiol A A, Mangaiyarkarasi D, Champeaux F J T, Watt F et al 2006 Adv. Mater. 18 5110.1002/adma.200501138 ↗
18. Zhanga H, Jia Z, Lv X and Liu Y 2014 Optik 125 55710.1016/j.ijleo.2013.07.012 ↗
19. Do T C, Bui H, Nguyen T V, Nguyen T A, Nguyen T H and Pham V H 2011 Adv. Nat. Sci.: Nanosci. Nanotechnol. 2 035001
20. Mescheder U, Khazi I, Kovacs A and Ivanov A 2014 Nanoscale Res. Lett. 9 42710.1186/1556-276X-9-427 ↗
21. Wachter G, Kuhn S, Minniberger S, Salter C, Asenbaum P, Millen J et al 2019 Light: Sci. Appl. 8 3710.1038/s41377-019-0145-y ↗
22. Dwivedi V K, Pradeesh K and Vijaya Prakash G 2011 Appl. Surf. Sci. 257 346810.1016/j.apsusc.2010.11.048 ↗
23. Pellandini P, Stanley R P, Houdre R, Oesterle U, Ilegems M and Weisbuch C 1997 Appl. Phys. Lett. 71 86410.1063/1.119671 ↗
24. Zhang H, Jia Z, Lv X and Liu Y 2014 Optik 125 55710.1016/j.ijleo.2013.07.012 ↗
25. Mulloni V and Pavesi L 2000 Appl. Phys. Lett. 76 252310.1063/1.126396 ↗
26. Volk J, Balazs J, Toth A L and Barsony I 2004 Sensor Actuat. B 100 16310.1016/j.snb.2003.12.042 ↗
27. Armitage A, Skolnick M S, Kavokin A V, Whittaker D M, Astratov V N and Gehring G A 1998 Phys. Rev. B 58 1536710.1103/PhysRevB.58.15367 ↗
28. Gusev D G, Martemyanov M G, Soboleva I V, Dolgova T V, Fedyanin A A and Aktsipetrov O A 2004 JETP Lett. 80 63310.1134/1.1857269 ↗
29. Agranovich V M, Litinskaia M and Lidzey D G 2003 Phys. Rev. 67 08531110.1103/PhysRevB.67.085311 ↗
30. Altug H and Vuckovic J 2005 Opt. Lett. 30 98210.1364/OL.30.000982 ↗
31. Shelykh I A, Kavokin A V, Rubo Y G, Liew T C H and Malpuech G 2010 Semicond. Sci. Technol. 25 01300110.1088/0268-1242/25/1/013001 ↗
32. Panzarini G, Andreani L C, Armitage A, Baxter D, Skolnick M S, Astratov V N et al 1999 Phys. Rev. B 59 508210.1103/PhysRevB.59.5082 ↗
33. Han D, Meng Z, Wu D, Zhang C and Zhu H 2011 Nanoscale Res. Lett. 6 45710.1186/1556-276X-6-457 ↗
34. Baxter D, Skolnick M S, Armitage A, Astratov V N, Whittaker D M, Fisher T A et al 1996 Phys. Rev. B 56 R1003210.1103/PhysRevB.56.R10032 ↗