An investigation of the growth of In0·53Ga0·47As layers on InP by liquid phase epitaxy
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OpenAlex topics: Semiconductor Quantum Structures and Devices · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices
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References (14)
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1. Beneking H, Grote N and Selders J 1982J. Cryst. Growth 54 5910.1016/0022-0248(81)90249-9 ↗
2. Bhattacharya P K, Rao M V and Tsai M J 1981J. Appl. Phys. 20 210510.1143/JJAP.20.2105 ↗
3. Cook L W, Tashima M M, Tabatabaie N, Lows T S and Stillman G E 1982J. Cryst. Growth 56 47510.1016/0022-0248(82)90467-5 ↗
4. Keramidas V G, Mahajan S, Temkin H and Bonner W A 1980Inst. Phys. Conf. Ser. 56 95
5. Keramidas V G, Temkin H and Bonner W A 1982Appl. Phys. Lett. 40 73110.1063/1.93208 ↗
6. Kuphal E and Pocker A 1982J. Cryst. Growth 58 13310.1016/0022-0248(82)90220-2 ↗
7. Logan R A 1987J. Appl. Phys. 62 179210.1063/1.339558 ↗
8. Logan R A, Henry C H, Merritt F R and Mahajan S 1983J. Appl. Phys. 54 546210.1063/1.332689 ↗
9. Mahajan S, Brasen D, Diguseppe M A, Keramidas V G, Temkin H, Zipfel C L, Bonner W A and Schwartz G P 1982Appl. Phys. Lett. 41 26610.1063/1.93496 ↗
10. Nakajima K 1985 inSemiconductors and semimetals (eds) R K Willardson and A C Beer (New York: Academic Press) Vol. 22A
11. Oliver J D Jr and Eastman L F 1980J. Electron. Mater. 9 69310.1007/BF02652891 ↗
12. Pearsall T P 1980IEEE J. Quantum Electron. QE-16 70910.1109/JQE.1980.1070557 ↗
13. Penna T C, Tamargo M C and Swartzwelder W L 1984J. Cryst. Growth 67 2710.1016/0022-0248(84)90126-X ↗
14. Stillman G E, Cook L W, Bulman G E, Tabatabaie N, Chin R and Dapkus P D 1982IEEE Trans. Electron. Devices ED-29 135510.1109/T-ED.1982.20884 ↗