journal article·2015-06

First-principle study on the effect of high Ag–2N co-doping on the conductivity of ZnO

WENXUE ZHANG, YUXING BAI, CHENG HE, XIAOLEI WU

Bulletin of Materials Science· Volume 38· Issue 3
Publisher page

Abstract

The geometric structure, band structure (BS) and density of state (DOS) of pure and p-type co-doping wurtzite ZnO have been investigated by the first-principle ultrasoft pseudopotential method with the generalized gradient approximation. These structures induce fully occupied defect states above the valence-band maximum of doped ZnO. The calculation results show that in the range of high doping concentration, when the co-doping concentration is more than a certain value, the conductivity decreased with the increase of co-doping concentration of Ag–2N in ZnO. Our findings suggest that co-doping of Ag–2N could efficiently enhance the N dopant solubility and is likely to yield better p-type conductivity.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: ZnO doping and properties · Gas Sensing Nanomaterials and Sensors · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (29)

Show source-provided references
1. Lide D R (ed) 2007–2008 CRC handbook of chemistry and physics (Boca Raton, FL : CRC Press) 88th ed
2. Pearton S J, Norton D P, Ip K, Heo Y W and Steiner T 2004 J. Vac. Sci. Technol. B 22 93210.1116/1.1714985 ↗
3. Zhang S B, Wei S -H and Zunger A 2001 Phys. Rev. B 63 07520510.1103/PhysRevB.63.075205 ↗
4. Yan Y F, Al-Jassim M M and Wei S H 2006 Appl. Phys. Lett. 89 18191210.1063/1.2378404 ↗
5. Vaithianathan V, Lee B T and Kim S S 2005 Appl. Phys. Lett. 86 06210110.1063/1.1854748 ↗
6. Wang P, Chen N and Yin Z G 2006 Appl. Phys. Lett. 88 15210210.1063/1.2193798 ↗
7. Kang H S, Ahn B D, Kim J H, Kim G H, Lim S H, Chang H W and Lee S Y 2006 Appl. Phys. Lett. 88 20210810.1063/1.2203952 ↗
8. Park C H, Zhang S B and Wei S -H 2002 Phys. Rev. B 66 07320210.1103/PhysRevB.66.073202 ↗
9. Wei S H 2004 Comput. Mater. Sci. 30 33710.1016/j.commatsci.2004.02.024 ↗
10. Chen K, Fan G H, Zhang Y and Ding S F 2008 Acta Phys. Chim. Sin. 24 6110.3866/PKU.WHXB20080111 ↗
11. Guo X L, Tabata H and Kawai T 2001 J. Cryst. Growth 223 13510.1016/S0022-0248(00)00952-0 ↗
12. Zuo C Y, Wen J and Bai Y L 2010 Chin. Phys. B 19 04710110.1088/1674-1056/19/4/047101 ↗
13. Bian J M, Li X M and Zhang C Y 2004 Appl. Phys. Lett. 85 407010.1063/1.1808229 ↗
14. Duan X M, Stampfl C, Bilek M M M and McKenzie D R 2009 Phys. Rev. B 79 23520810.1103/PhysRevB.79.235208 ↗
15. Wan Q X, Xiong Z H, Dai J N, Rao J P and Jiang F Y 2008 Opt. Mater. 30 81710.1016/j.optmat.2007.02.051 ↗
16. He H Y, Hu J and Pan B C 2009 J. Chem. Phys. 130 (c) 20451610.1063/1.3146793 ↗
17. Gelves G A, Lin B, Sundararaj U and Haber J A 2006 Adv. Funct. Mater. 16 242310.1002/adfm.200600336 ↗
18. Delley B 1990 J. Chem. Phys. 92 50810.1063/1.458452 ↗
19. Perdew J P, Burke K and Ernzerhof M 1996 Phys. Rev. Lett. 77 386510.1103/PhysRevLett.77.3865 ↗
20. Davidson E R and Chakravorty S 1992 Theor. Chim. Acta 83 31910.1007/BF01113058 ↗
21. Wang B L, Zhao J J, Chen X S, Shi D and Wang G H 2006 Nanotechnology 17 317810.1088/0957-4484/17/13/017 ↗
22. Segall M D, Shah R, Pickard C J and Payne M C 1996 Phys. Rev. B 54 1631710.1103/PhysRevB.54.16317 ↗
23. Özgür Ú, Alivov Y I, Liu C, Teke A, Reshchikov M A, Doğan S, Avrutin V, Cho S J and Morkoc H 2005 J. Appl. Phys. 98 04130110.1063/1.1992666 ↗
24. Hou Q Y, Li J J, Zhao C W, Ying C and Z. Y 2011 Physica B 406 195610.1016/j.physb.2011.02.064 ↗
25. Abrahams S C and Bemstein J L 1969 Acta Crystallogr. B 25 123310.1107/S0567740869003876 ↗
26. He C, Qi L, Zhang W X and Pan H 2011 Appl. Phys. Lett. 99 07310510.1063/1.3626284 ↗
27. Zuo C Y, Wen J and Bai Y L 2010 Chin. Phys. B 19 04710110.1088/1674-1056/19/4/047101 ↗
28. Vanderbilt D 1990 Phys. Rev. B 41 789210.1103/PhysRevB.41.7892 ↗
29. Huang K and Han N 1985 Solid state physics (Beijing : Higher Education Press)