journal article·1985-12

Deep electron trap level in semi-insulating GaAs

A K Saxena

Bulletin of Materials Science· Volume 7· Issue 5
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Abstract

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Research context

OpenAlex topics: Quantum and electron transport phenomena · Semiconductor materials and devices · Advanced Chemical Physics Studies

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References (6)

Show source-provided references
1. Bhattacharya P K, Majerfeld A and Saxena A K 1979 Proceedings of the 6th International Symposium on gallium arsenide and related compounds, St. Louis (London: Institute of Physics) pp. 199–210.
2. Hasegawa F and Majerfeld A 1976Electron. Lett. 12 5210.1049/el:19760042 ↗
3. Hasegawa F and Majerfeld A 1975Electron. Lett. 11 28610.1049/el:19750217 ↗
4. Martin G M, Mitonneau A and Mircea A 1977Electron. Lett. 13 19110.1049/el:19770140 ↗
5. Saxena A K 1982Phys. Status Solidi B77 777
6. Van-Der Pauw L J 1958/59Phyilips Tech. Rev. 20 220