Surface morphology and properties of GaAs epilayers controlled by temperature difference method of liquid phase epitaxy
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor materials and devices · Semiconductor Lasers and Optical Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (15)
Show source-provided references
1. Dawson L R 1974J. Cryst. Growth 27 86
2. Harris J S and Synder W L 1969Solid State Electron 12 33710.1016/0038-1101(69)90088-4 ↗
3. Mattes B L and Route R K 1974J. Cryst. Growth 27 13310.1016/S0022-0248(74)80057-6 ↗
4. Mlavsky A I and Weinstein M 1963J. Appl. Phys. 34 288510.1063/1.1729825 ↗
5. Nelson H 1963RCA Rev. 24 603
6. Nishizawa J and Okuno Y 1978 RIEC Technical Report, TR-41 Apr.
7. Rosztoczy F E and Kinoshita J 1974J. Electrochem. Soc. 121 43910.1149/1.2401833 ↗
8. Shih K K, Woodall J M, Blum S E and Foster L M 1968J. Appl. Phys. 39 296210.1063/1.1656703 ↗
9. Shunt F A 1969Constitution of binary alloys (New York: McGraw-Hill) 2nd Suppl.
10. Small M B, Blakeslee A E, Shih K K and Potemski R M 1975J. Cryst. Growth 30 25710.1016/0022-0248(75)90097-4 ↗
11. Su Y K, Wu M C, Cheng K Y and Chang C Y 1984J. Cryst. Growth 67 47710.1016/0022-0248(84)90040-X ↗
12. Toyada N, Mihara M and Hara T 1976J. Appl. Phys. 47 44310.1063/1.322668 ↗
13. Vilms J and Garrett J P 1972Solid State Electron 15 44310.1016/0038-1101(72)90115-3 ↗
14. Wei C C, Su Y K, Chang C C, Liu B D and Lu S C 1981Chinese J. Mater. Sci. 13 56
15. Wu M C, Su Y K, Chang C Y and Cheng K Y 1985J. Appl. Phys. (to be published)