Annealing behaviour of electron-beam deposited tin dioxide films
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: ZnO doping and properties · Semiconductor materials and devices · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (10)
Show source-provided references
1. Arai T 1960J. Phys. Soc. Jpn 15 91610.1143/JPSJ.15.916 ↗
2. Chopra K L 1969Thin film phenomenon (New York: McGraw Hill) 381–387
3. Ghosh A K, Fishman C and Feng T 1978J. Appl. Phys. 49 349010.1063/1.325260 ↗
4. Ishiguro K, Sasaki T, Arai T and Imai I 1958J. Phys. Soc. Jpn 13 29610.1143/JPSJ.13.296 ↗
5. Jarzebeski Z M 1976J. Electrochemical Soc. 123 299C10.1149/1.2133090 ↗
6. Maissel L I and Glang R 1970Handbook of thin films technology (New York: McGraw Hill) 13–26
7. Nagatoma T, Endo M and Omoto O 1979Jpn J. Appl. Phys. 18 110310.1143/JJAP.18.1103 ↗
8. Raccanelli A and Madalena A 1976J. Am. Ceram. Soc. 59 42510.1111/j.1151-2916.1976.tb09510.x ↗
9. Shanthi E, Banerjee A, Dutta V and Chopra K L 1980Thin Solid Films 71 23710.1016/0040-6090(80)90160-1 ↗
10. Viscrian I and Georgescu V 1969Thin Solid Films 3 R1710.1016/0040-6090(69)90088-1 ↗