Current-voltage studies on β-FeSi2/Si heterojunction
Source abstract
Abstract
I-V characteristics of both β-FeSi2/n-Si and β-FeSi2/p-Si were studied at room temperature. The junctions were formed by depositing Fe on Si selectively followed by thermal annealing and some samples were later treated by pulsed laser. Temperature of thermal annealing and diode area were also varied.I-V studies on all these samples were done and ideality factors were computed. Results obtained were interpreted.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and interfaces · Integrated Circuits and Semiconductor Failure Analysis · Silicon and Solar Cell Technologies
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References (7)
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