EBIC and DLTS characterization of pure Si crystals

Possibilities of measurements of low defect concentration in Si by the electrical methods are discussed. The problems arising in such measurements are illustrated by measurements of iron concentration in Si. It is demonstrated that gold diffusion experiments can be used for revealing and study of some electrically inactive defects. Possibility of nondestructive reconstruction of defect depth profiles by DLTS and using the profile obtained for understanding the defect nature is illustrated by the results of hydrogen and hydrogen related defect investigations. EBIC investigations of dislocations are shown to be a rather sensitive method for revealing recombination defects.